A3I20X050N 产品信息|NXP

特点


Airfast RF LDMOS Wideband Integrated Power Amplifier, 1800-2200 MHz, 6.3 W Avg., 28 V

封装


FM8: FM8, flange mount package, 8 terminals, 1.02 mm pitch, 10.26 mm x 10.26 mm x 3.81 mm body

购买选项

工作特点

参数
Frequency (Min) (MHz)
1800
Frequency (Max) (MHz)
2200
Supply Voltage (Typ) (V)
28
参数
Peak Power (Typ) (dBm)
48
Peak Power (Typ) (W)
63
Die Technology
LDMOS

环境

部件/12NC无铅欧盟 RoHS无卤素RHF指标REACH SVHC重量(mg)
A3I20X050NR1(935395026564)
Yes
Yes
Certificate Of Analysis (CoA)
Yes
DREACH SVHC
1609.93

质量

部件/12NC安全保障功能安全湿度灵敏度等级(MSL)封装体峰值温度(PPT)(C°)Maximum Time at Peak Temperatures (s)
无铅焊接无铅焊接无铅焊接
A3I20X050NR1
(935395026564)
No
3
260
40

配送

部件/12NC协调关税 (美国)免责声明
A3I20X050NR1
(935395026564)
854233

产品变更通知

部件/12NC发行日期生效日期产品更改通知标题
A3I20X050NR1
(935395026564)
2025-04-162025-05-26202504006IFreescale Logo to NXP Logo Product Marking Conversion for All Remaining Former Freescale Products
A3I20X050NR1
(935395026564)
2020-12-152020-12-16202011011INXP Will Add a Sealed Date to the Product Label

更多信息 A3I20X050N

The A3I20X050N integrated Doherty circuit is designed with on-chip matching that makes it usable from 1800 to 2200 MHz. This multi-stage structure is rated for 20 to 32 V operation and covers all typical cellular base station modulation formats.