A2I35H060N 产品信息|NXP

A2I35H060N

不推荐用于新设计

A2I35H060N

不推荐用于新设计

购买选项

A2I35H060NR1

不推荐用于新设计

12NC: 935322497528

详细信息

订购

从分销商处购买

工作特点

参数
fi(RF) [max] (MHz)
3800
Number of pins
17
Package Style
DFM
Amp Class
AB, C
Test Signal
WCDMA
Supply Voltage (Typ) (V)
28
Class
AB, C
Die Technology
LDMOS
Thermal Resistance (Spec) (℃/W)
1.7
P1dB (Typ) (dBm)
46.8
Security Status
COMPANY PUBLIC
Frequency (Min-Max) (MHz)
3400, 3800
Efficiency (Typ) (%)
32.4
Peak Power (Typ) (W)
65
Frequency Band (Hz)
3400000000, 3800000000
参数
Description
Airfast RF LDMOS Wideband Integrated Power Amplifier, 3400-3800 MHz, 10 W Avg., 28 V
fi(RF) [min] (MHz)
3400
Output Power (Typ) (W) @ Intermodulation Level at Test Signal
10 @ AVG
P1dB (Typ) (W)
48
Gain (Typ) (dB)
24
Power Gain (Typ) (dB) @ f (MHz)
24 @ 3500
Frequency (Max) (MHz)
3800
Frequency (Min) (MHz)
3400
Frequency (Min-Max) (GHz)
3.4 to 3.8000002
frange [max] (MHz)
3800
frange [min] (MHz)
3400
Rth(j-a) (K/W)
1.7
Matching
input and output impedance matching
Modes of Operation
wideband code division multiple access
Peak Power (Typ) (dBm)
48.1

环境

部件/12NC无铅欧盟 RoHS无卤素RHF指标二级互连REACH SVHC重量(mg)
A2I35H060NR1(935322497528)
No
Yes
Certificate Of Analysis (CoA)
Yes
H
e3
REACH SVHC
1580.2

质量

部件/12NC安全保障功能安全湿度灵敏度等级(MSL)封装体峰值温度(PPT)(C°)Maximum Time at Peak Temperatures (s)
铅焊接铅焊接无铅焊接铅焊接无铅焊接
A2I35H060NR1
(935322497528)
No
3
260
260
40
40

配送

部件/12NC协调关税 (美国)免责声明出口控制分类编号 (美国)
A2I35H060NR1
(935322497528)
854233
EAR99

产品变更通知

部件/12NC发行日期生效日期产品更改通知标题
A2I35H060NR1
(935322497528)
2019-02-222019-05-22201808025F01IMPROVED PASSIVE COMPONENT ATTACH MATERIAL FOR TO270WB PACKAGES

更多信息 A2I35H060N

The A2I35H060N wideband integrated circuit is an asymmetrical Doherty designed with on-chip matching that makes it usable from 3400 to 3800 MHz. This multi-stage structure is rated for 26 to 32 V operation and covers all typical cellular base station modulation formats.