A2I09VD030G 产品信息|NXP

特点


Airfast RF LDMOS Wideband Integrated Power Amplifier, 575-1300 MHz, 4 W AVG., 48 V

封装


FM15F: FM15F, plastic, flange mount flat package; 15 terminals; 9.02 mm x 17.53 mm x 2.59 mm body

购买选项

工作特点

参数
Frequency (Min) (MHz)
575
Frequency (Max) (MHz)
1300
Supply Voltage (Typ) (V)
48
参数
Peak Power (Typ) (dBm)
46.1
Peak Power (Typ) (W)
40.5
Die Technology
LDMOS

环境

部件/12NC无铅欧盟 RoHS无卤素RHF指标二级互连REACH SVHC重量(mg)
A2I09VD030GNR1(935337252528)
No
Yes
Certificate Of Analysis (CoA)
Yes
H
e3
REACH SVHC
1598.5

质量

部件/12NC安全保障功能安全湿度灵敏度等级(MSL)封装体峰值温度(PPT)(C°)Maximum Time at Peak Temperatures (s)
铅焊接铅焊接无铅焊接铅焊接无铅焊接
A2I09VD030GNR1
(935337252528)
No
3
260
260
40
40

配送

部件/12NC协调关税 (美国)免责声明出口控制分类编号 (美国)
A2I09VD030GNR1
(935337252528)
854233
EAR99

产品变更通知

部件/12NC发行日期生效日期产品更改通知标题
A2I09VD030GNR1
(935337252528)
2025-04-162025-05-26202504006IFreescale Logo to NXP Logo Product Marking Conversion for All Remaining Former Freescale Products

更多信息 A2I09VD030N

The A2I09VD030N wideband integrated circuit is designed with on-chip matching that makes it usable from 575 to 1300 MHz. This multi-stage structure is rated for 48 to 55 V operation and covers all typical cellular base station modulation formats.