Combines industry's highestRF output power with superior ruggedness and thermal performance
NXPSemiconductors today introduced the most powerful RF transistor in anytechnology operating at any frequency. Designed to deliver 1.50 kW CW at 50V,the MRF1K50H can reduce the number of transistors in high-power RF amplifiers,which decreases amplifier size and bill of materials. The MRF1K50H operates upto 500 MHz for a broad range of applications from laser and plasma sources toparticle accelerators, industrial welding machines, radio and VHF TV broadcasttransmitters, and amateur radio linear amplifiers.
Like allrugged LDMOS transistors, the MRF1K50H is expected to survive a VSWR of 65:1but can absorb 50 percent more energy than its predecessor, the 1.25-kWMRFE6VP61K25H. This level of ruggedness increases reliability, which makes thetransistor an excellent alternative to vacuum tubes.
TheMRF1K50H is housed in a standard air cavity ceramic package, and is impedancecompatible with existing high-power transistors on the market today: it cansimply be dropped into existing systems, without the need to redesign the printed-circuitboard (PCB), requiring only light retuning.
"This newtransistor provides RF designers with the highest output power and highestenergy absorption in the market while dropping into existing PCBs," said PierrePiel senior director for RF power industrial technologies at NXP. "The MRF1K50Hadds reliability to industrial systems that require operation in the harshestenvironments."
Evengreater reliability can be achieved with the over-molded plastic version of thetransistor, the MRF1K50N, which reduces the thermal resistance by 30 percentcompared to the MRF1K50H. NXP's plastic packaging technology helps extract moreperformance from RF transistors, while simplifying amplifier manufacturabilitythanks to tighter dimensional tolerances and better solder connections.
Specificationsfor both versions include efficiency of 80 percent at 100 MHz, gain of 23.5 dB,and minimum breakdown voltage of 135V. Once in production, the transistors willbe part of NXP's Product Longevity Program, ensuring availability for at least15 years. For terms and conditions and to obtain a list of available productsplease see www.nxp.com/productlongevity.
TheMRF1K50H and MRF1K50N are currently sampling, and production is expected inJuly 2016. Reference circuits for various frequencies are available.
For pricing or additionalinformation, please contact your local NXP sales office or NXP approveddistributor.