LDMOS Application Notes

Documentation

ID and Description Vendor ID Format Size K Rev # Date Last Modified
AN1530 — Advanced Amplifier Concept Package Application Note   NXP   pdf   187   0   12/31/1994  
AN1643 — RF LDMOS Power Modules for GSM Base Station Application: Optimum Biasing Current - Application Note   NXP   pdf   88   0   1/31/1998  
AN1670 — 60 Watts, GSM 900 MHz, LDMOS Two-Stage Amplifier Application Note   NXP   pdf   816   0   9/14/1998  
AN1907 — AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages   NXP   pdf   889   3   5/13/2009  
AN1908 — AN1908 - Solder Reflow Attach Method for High Power RF Devices in Air Cavity Packages   NXP   pdf   649   1   2/24/2011  
AN1923 — Mounting Method with Mechanical Fasteners for the MRF19090 and Similar Packages Application Note   NXP   pdf   466   0   4/10/2001  
AN1938 — Sensitivity of High Power RF Transistors to Source and Output Loads Application Note   NXP   pdf   253   1   12/03/2001  
AN1949 — Mounting Method for the MHVIC910HR2 PFP-16 and Similar Surface Mount Packages Application Note   NXP   pdf   595   0   2/05/2003  
AN1977 — Quiescent Current Control for the RF Integrated Circuit Device Family - AN1977   NXP   pdf   110   0   10/09/2003  
AN1987 — Quiescent Current Control for the RF Integrated Circuit Device Family - AN1987   NXP   pdf   108   1   5/12/2004  
AN3263 — Bolt Down Mounting Method for High Power RF Transistors and RFICs in Over-Molded Plastic Packages   NXP   pdf   8024   0   6/07/2006  
AN4005 — Thermal Management and Mounting Method for the PLD 1.5 RF Power Surface Mount Package Application Note   NXP   pdf   111   0   11/14/1997  
AN423 — Field Effect Transistor RF Amplifier Design Techniques Application Note   NXP   pdf   104   0   12/31/1993