MMZ25332B4_1427-2700 MHz, 26.5 dB Amplifier | NXP 半导体

1427-2700 MHz, 26.5 dB, 33 dBm InGaP HBT

查看产品图片

Features

  • Frequency: 1427-2700 MHz
  • P1dB: 33 dBm @ 2500 MHz
  • Power Gain: 26.5 dB @ 2500 MHz
  • OIP3: 48 dBm @ 2500 MHz
  • EVM ≤ 3% @ 23.5 dBm Pout, WLAN (802.11g)
  • Active Bias Control (adjustable externally)
  • Power Down Control via VBIAS
  • Single 3 to 5 Volt Supply
  • Single-ended Power Detector
  • Cost-effective 24-Pin, 4 mm QFN Surface Mount Plastic Package
  • RoHS Compliant

RF Performance Table

Typical Performance

VCC1 = VCC2 = VBIAS = 5 Vdc, ICQ = 400 mA

购买/参数










































































































N true 0 PSPMMZ25332B4zh 3 封装信息 Package Information t790 1 应用笔记 Application Note t789 1 数据手册 Data Sheet t520 1 zh zh zh 数据手册 Data Sheet 1 1 2 English MMZ25332B4 1427-2700 MHz, 33 dBm P1dB, high linearity amplifier designed for wireless broadband applications 1450713959195706976277 PSP 1.2 MB None None documents None 1450713959195706976277 /docs/en/data-sheet/MMZ25332B4.pdf 1231356 /docs/en/data-sheet/MMZ25332B4.pdf MMZ25332B4 documents N N 2017-12-10 MMZ25332B4 1427-2700 MHz, 26.5 dB, 2 W Amplifier Data Sheet /docs/en/data-sheet/MMZ25332B4.pdf /docs/en/data-sheet/MMZ25332B4.pdf Data Sheet N 980000996212993340 2023-02-09 pdf N en Jan 20, 2023 980000996212993340 Data Sheet Y N MMZ25332B4 1427-2700 MHz, 26.5 dB, 2 W Amplifier Data Sheet 应用笔记 Application Note 1 2 2 English This document explains the methodology used by NXP for thermal characterization of RF high power amplifier products, which include LDMOS and GaN active devices. 1075398872032723970051 PSP 235.5 KB None None documents None 1075398872032723970051 /docs/en/application-note/AN1955.pdf 235468 /docs/en/application-note/AN1955.pdf AN1955 documents N N 2016-11-09 Thermal Characterization Methodology of RF Power Amplifiers - Application Note /docs/en/application-note/AN1955.pdf /docs/en/application-note/AN1955.pdf Application Note N 645036621402383989 2025-01-28 pdf N en Jul 11, 2024 645036621402383989 Application Note Y N Thermal Characterization Methodology of RF Power Amplifiers - Application Note 封装信息 Package Information 1 3 A English 1405322838813725717220 PSP 54.3 KB None None documents None 1405322838813725717220 /docs/en/package-information/98ASA00462D.pdf 54309 /docs/en/package-information/98ASA00462D.pdf SOT616-7 documents N N 2016-10-31 98ASA00462D, QFN Punch, 4.0x4.0x0.85, Pitch 0.5, 24 Pins /docs/en/package-information/98ASA00462D.pdf /docs/en/package-information/98ASA00462D.pdf Package Information N 302435339416912908 2022-12-07 pdf N en Feb 9, 2016 302435339416912908 Package Information D N 98ASA00462D, QFN Punch, 4.0x4.0x0.85, Pitch 0.5, 24 Pins false 0 MMZ25332B4 downloads zh-Hans true 1 Y PSP 封装信息 1 /docs/en/package-information/98ASA00462D.pdf 2016-10-31 1405322838813725717220 PSP 3 Feb 9, 2016 Package Information None /docs/en/package-information/98ASA00462D.pdf English documents 54309 None 302435339416912908 2022-12-07 N /docs/en/package-information/98ASA00462D.pdf 98ASA00462D, QFN Punch, 4.0x4.0x0.85, Pitch 0.5, 24 Pins /docs/en/package-information/98ASA00462D.pdf documents 302435339416912908 Package Information N en None D pdf A N N 98ASA00462D, QFN Punch, 4.0x4.0x0.85, Pitch 0.5, 24 Pins 54.3 KB SOT616-7 N 1405322838813725717220 应用笔记 1 /docs/en/application-note/AN1955.pdf 2016-11-09 1075398872032723970051 PSP 2 Jul 11, 2024 Application Note This document explains the methodology used by NXP for thermal characterization of RF high power amplifier products, which include LDMOS and GaN active devices. None /docs/en/application-note/AN1955.pdf English documents 235468 None 645036621402383989 2025-01-28 N /docs/en/application-note/AN1955.pdf Thermal Characterization Methodology of RF Power Amplifiers - Application Note /docs/en/application-note/AN1955.pdf documents 645036621402383989 Application Note N en None Y pdf 2 N N Thermal Characterization Methodology of RF Power Amplifiers - Application Note 235.5 KB AN1955 N 1075398872032723970051 数据手册 1 /docs/en/data-sheet/MMZ25332B4.pdf 2017-12-10 1450713959195706976277 PSP 1 Jan 20, 2023 Data Sheet MMZ25332B4 1427-2700 MHz, 33 dBm P1dB, high linearity amplifier designed for wireless broadband applications None /docs/en/data-sheet/MMZ25332B4.pdf English documents 1231356 None 980000996212993340 2023-02-09 N /docs/en/data-sheet/MMZ25332B4.pdf MMZ25332B4 1427-2700 MHz, 26.5 dB, 2 W Amplifier Data Sheet /docs/en/data-sheet/MMZ25332B4.pdf documents 980000996212993340 Data Sheet N en None Y pdf 2 N N MMZ25332B4 1427-2700 MHz, 26.5 dB, 2 W Amplifier Data Sheet 1.2 MB MMZ25332B4 N 1450713959195706976277 true Y Products

文档

快速参考恩智浦 文档类别.

3 文件

紧凑列表

设计文件

快速参考恩智浦 设计文件类型.

3 设计文件

支持

您需要什么帮助?