低电阻单刀单掷模拟开关 | NXP 半导体

低电阻单刀单掷模拟开关

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特征

  • 宽电源电压范围从1.4 V至4.3 V
  • 极低的导通电阻(峰值):
    • VCC = 1.4 V时为0.8 Ω(典型值)
    • VCC = 1.65 V时为0.5 Ω(典型值)
    • VCC = 2.3 V时为0.3 Ω(典型值)
    • VCC = 2.7 V时为0.25 Ω(典型值)
    • VCC = 4.3 V时为0.25 Ω(典型值)
  • 高抗噪性
  • ESD保护:
    • HBM JESD22–A114F 3A类超过7500 V
    • MM JESD22–A115–A超过200 V
    • CDM AEC–Q100–011修订版B超过1000 V
    • 开关端口的IEC61000-4-2接触放电超过6000 V
  • 低功耗CMOS
  • 闭锁性能超过JESD 78B II类A级规定的100 mA
  • 启用输入接受高于电源电压的电压
  • 1.8 V控制逻辑,VCC = 3.6 V
  • 高电流处理能力(3.3 V供电时500 mA的连续电流)
  • 额定温度范围为-40 °C至+85 °C和-40 °C至+125 °C

Target Applications

  • 手机
  • PDA
  • 便携式媒体播放器

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