MMRF1007H_965-1215 MHz, 1000 W, 50 V | NXP 半导体

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技术

965-1215 MHz, 1000 W, 50 V Lateral N-Channel Broadband RF Power MOSFETs

MMRF1007H
不推荐用于新设计
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RF Power transistors, MMRF1007HR5 and MMRF1007HSR5, are designed for applications operating at frequencies from 900 to 1215 MHz. These devices are suitable for use in defense and commercial pulse applications, such as IFF and DME.

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产品详情

特征

  • Typical Pulse Performance: VDD = 50 Vdc, IDQ = 150 mA, Pout = 1000 W Peak (100 W Avg.), f = 1030 MHz, Pulse Width = 128 µsec, Duty Cycle = 10%
    Power Gain: 20 dB
    Drain Efficiency: 56%
  • Capable of Handling 5:1 VSWR, @ 50 Vdc, 1030 MHz, 1000 W Peak Power
  • Characterized with Series Equivalent Large–Signal Impedance Parameters
  • Internally Matched for Ease of Use
  • Qualified Up to a Maximum of 50 VDD Operation
  • Integrated ESD Protection
  • Designed for Push-Pull Operation
  • Greater Negative Gate-Source Voltage Range for Improved Class C Operation
  • RoHS Compliant
  • In Tape and Reel. R5 Suffix = 50 Units, 56 mm Tape Width, 13-inch Reel.
  • These products are included in Our product longevity program with assured supply for a minimum of 10 years after launch.

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1 结果

不包含 1 不推荐用于新设计

部件

展开描述

订购

计算机辅助设计模型

状态

MMRF1007HS
数据手册

建议不要在新设计中使用该软件

N true 0 PSPMMRF1007Hzh 3 封装信息 Package Information t790 2 数据手册 Data Sheet t520 1 zh zh zh 数据手册 Data Sheet 1 1 0 English The MMRF1007HR5 and MMRF1007HSR5 are RF power transistors designed for applications operating at frequencies between 900 to 1215 MHz. These devices are suitable for use in defense and commercial pulse applications, such as IFF and DME. 1387569052833718227285 PSP 870.2 KB None None documents None 1387569052833718227285 /docs/en/data-sheet/MMRF1007H.pdf 870200 /docs/en/data-sheet/MMRF1007H.pdf MMRF1007H documents N N 2016-10-31 ARCHIVED - MMRF1007HR5, MMRF1007HSR5 965-1215 MHz, 1000 W, 50 V Lateral N-Channel Broadband RF Power MOSFETs - Data Sheet /docs/en/data-sheet/MMRF1007H.pdf /docs/en/data-sheet/MMRF1007H.pdf Data Sheet N 980000996212993340 2024-02-09 pdf N en Dec 27, 2013 980000996212993340 Data Sheet Y N ARCHIVED - MMRF1007HR5, MMRF1007HSR5 965-1215 MHz, 1000 W, 50 V Lateral N-Channel Broadband RF Power MOSFETs - Data Sheet 封装信息 Package Information 2 2 H English 98ASB16977C, NI-1230H-4S A1003176946486 PSP 159.0 KB None None documents None A1003176946486 /docs/en/package-information/98ASB16977C.pdf 159037 /docs/en/package-information/98ASB16977C.pdf SOT1787-1 documents N N 2016-10-31 98ASB16977C, NI-1230H-4S, 41.15x10.16x4.19, Pitch 13.72, 5 Pins /docs/en/package-information/98ASB16977C.pdf /docs/en/package-information/98ASB16977C.pdf Package Information N 302435339416912908 2022-12-07 pdf N en Oct 25, 2019 302435339416912908 Package Information D N 98ASB16977C, NI-1230H-4S, 41.15x10.16x4.19, Pitch 13.72, 5 Pins 3 H English 98ARB18247C, 375E-04, NI-1230S-4S B1003167510411 PSP 44.6 KB None None documents None B1003167510411 /docs/en/package-information/98ARB18247C.pdf 44578 /docs/en/package-information/98ARB18247C.pdf SOT1829-1 documents N N 2016-10-31 98ARB18247C, NI-1230S-4S, 32.26x10.16x4.19, Pitch 13.72, 5 Pins /docs/en/package-information/98ARB18247C.pdf /docs/en/package-information/98ARB18247C.pdf Package Information N 302435339416912908 2022-12-07 pdf N en Feb 23, 2016 302435339416912908 Package Information D N 98ARB18247C, NI-1230S-4S, 32.26x10.16x4.19, Pitch 13.72, 5 Pins false 0 MMRF1007H downloads zh-Hans true 1 Y PSP 封装信息 2 /docs/en/package-information/98ASB16977C.pdf 2016-10-31 A1003176946486 PSP 2 Oct 25, 2019 Package Information 98ASB16977C, NI-1230H-4S None /docs/en/package-information/98ASB16977C.pdf English documents 159037 None 302435339416912908 2022-12-07 N /docs/en/package-information/98ASB16977C.pdf 98ASB16977C, NI-1230H-4S, 41.15x10.16x4.19, Pitch 13.72, 5 Pins /docs/en/package-information/98ASB16977C.pdf documents 302435339416912908 Package Information N en None D pdf H N N 98ASB16977C, NI-1230H-4S, 41.15x10.16x4.19, Pitch 13.72, 5 Pins 159.0 KB SOT1787-1 N A1003176946486 /docs/en/package-information/98ARB18247C.pdf 2016-10-31 B1003167510411 PSP 3 Feb 23, 2016 Package Information 98ARB18247C, 375E-04, NI-1230S-4S None /docs/en/package-information/98ARB18247C.pdf English documents 44578 None 302435339416912908 2022-12-07 N /docs/en/package-information/98ARB18247C.pdf 98ARB18247C, NI-1230S-4S, 32.26x10.16x4.19, Pitch 13.72, 5 Pins /docs/en/package-information/98ARB18247C.pdf documents 302435339416912908 Package Information N en None D pdf H N N 98ARB18247C, NI-1230S-4S, 32.26x10.16x4.19, Pitch 13.72, 5 Pins 44.6 KB SOT1829-1 N B1003167510411 数据手册 1 /docs/en/data-sheet/MMRF1007H.pdf 2016-10-31 1387569052833718227285 PSP 1 Dec 27, 2013 Data Sheet The MMRF1007HR5 and MMRF1007HSR5 are RF power transistors designed for applications operating at frequencies between 900 to 1215 MHz. These devices are suitable for use in defense and commercial pulse applications, such as IFF and DME. None /docs/en/data-sheet/MMRF1007H.pdf English documents 870200 None 980000996212993340 2024-02-09 N /docs/en/data-sheet/MMRF1007H.pdf ARCHIVED - MMRF1007HR5, MMRF1007HSR5 965-1215 MHz, 1000 W, 50 V Lateral N-Channel Broadband RF Power MOSFETs - Data Sheet /docs/en/data-sheet/MMRF1007H.pdf documents 980000996212993340 Data Sheet N en None Y pdf 0 N N ARCHIVED - MMRF1007HR5, MMRF1007HSR5 965-1215 MHz, 1000 W, 50 V Lateral N-Channel Broadband RF Power MOSFETs - Data Sheet 870.2 KB MMRF1007H N 1387569052833718227285 true Y Products

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