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960-1215 MHz, 500 W, 50 V Pulse Lateral N-Channel RF Power MOSFETs
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产品详情
特征
- Characterized with Series Equivalent Large-Signal Impedance Parameters
- Internally Matched for Ease of Use
- Qualified Up to a Maximum of 50 VDD Operation
- Integrated ESD Protection
- Greater Negative Gate-Source Voltage Range for Improved Class C Operation
- RoHS Compliant
- In Tape and Reel. R5 Suffix = 50 Units, 56 mm Tape Width, 13-inch Reel.
- These products are included in Our product longevity program with assured supply for a minimum of 10 years after launch.
RF Performance Table
Typical Pulse Performance
VDD = 50 Vdc, IDQ = 200 mA, Pulse Width = 128 µsec, Duty Cycle = 10%| Application | Pout (W) |
f (MHz) |
Gps (dB) |
ηD (%) |
| Narrowband | 500 Peak | 1030 | 19.7 | 62.0 |
| Broadband | 500 Peak | 960-1215 | 18.5 | 57.0 |
- Capable of Handling 10:1 VSWR, @ 50 Vdc, 1030 MHz, 500 W Peak Power
