MMRF1009H_960-1215 MHz, 500 W, 50 V Pulse | NXP 半导体

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960-1215 MHz, 500 W, 50 V Pulse Lateral N-Channel RF Power MOSFETs

MMRF1009H
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RF Power transistors, MMRF1009HR5 and MMRF1009HSR5, are designed for applications operating at frequencies between 960 and 1215 MHz. These devices are suitable for use in pulse applications.

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特征

  • Characterized with Series Equivalent Large-Signal Impedance Parameters
  • Internally Matched for Ease of Use
  • Qualified Up to a Maximum of 50 VDD Operation
  • Integrated ESD Protection
  • Greater Negative Gate-Source Voltage Range for Improved Class C Operation
  • RoHS Compliant
  • In Tape and Reel. R5 Suffix = 50 Units, 56 mm Tape Width, 13-inch Reel.
  • These products are included in Our product longevity program with assured supply for a minimum of 10 years after launch.

RF Performance Table

Typical Pulse Performance

VDD = 50 Vdc, IDQ = 200 mA, Pulse Width = 128 µsec, Duty Cycle = 10%
Application Pout
(W)		 f
(MHz)		 Gps
(dB)		 ηD
(%)
Narrowband500 Peak103019.762.0
Broadband500 Peak960-121518.557.0
  • Capable of Handling 10:1 VSWR, @ 50 Vdc, 1030 MHz, 500 W Peak Power
N true 0 PSPMMRF1009Hzh 3 封装信息 Package Information t790 2 数据手册 Data Sheet t520 1 zh 0 false zh zh 数据手册 Data Sheet 1 1 0 English The MMRF1009HR5 and MMRF1009HSR5 are RF power transistors designed for applications operating at frequencies from 900 to 1215 MHz. These devices are suitable for use in defense and commercial pulse applications, such as IFF and DME. 1387569756099698470895 PSP 843.8 KB None None documents None 1387569756099698470895 /docs/en/data-sheet/MMRF1009H.pdf 843772 /docs/en/data-sheet/MMRF1009H.pdf MMRF1009H documents N N 2016-10-31 ARCHIVED - MMRF1009HR5, MMRF1009HSR5 960-1215 MHz, 500 W, 50 V Pulse Lateral N-Channel RF Power MOSFETs - Data Sheet /docs/en/data-sheet/MMRF1009H.pdf /docs/en/data-sheet/MMRF1009H.pdf Data Sheet N 980000996212993340 2023-12-05 pdf N en Jan 2, 2014 980000996212993340 Data Sheet Y N ARCHIVED - MMRF1009HR5, MMRF1009HSR5 960-1215 MHz, 500 W, 50 V Pulse Lateral N-Channel RF Power MOSFETs - Data Sheet 封装信息 Package Information 2 2 J English NI-780S, 465A-06 E1003176922206 PSP 43.5 KB None None documents None E1003176922206 /docs/en/package-information/98ASB16718C.pdf 43526 /docs/en/package-information/98ASB16718C.pdf SOT1793-1 documents N N 2016-10-31 98ASB16718C, NI-C, 0.81x0.39x3.76, Pitch 14.6, 3 Pins /docs/en/package-information/98ASB16718C.pdf /docs/en/package-information/98ASB16718C.pdf Package Information N 302435339416912908 2022-12-07 pdf N en Mar 22, 2016 302435339416912908 Package Information D N 98ASB16718C, NI-C, 0.81x0.39x3.76, Pitch 14.6, 3 Pins 3 H English NI-780 U1003176831092 PSP 44.1 KB None None documents None U1003176831092 /docs/en/package-information/98ASB15607C.pdf 44100 /docs/en/package-information/98ASB15607C.pdf SOT1792-1 documents N N 2016-10-31 98ASB15607C, NI-C, 1.34x0.39x3.76, Pitch 1.1, 3 Pins /docs/en/package-information/98ASB15607C.pdf /docs/en/package-information/98ASB15607C.pdf Package Information N 302435339416912908 2022-12-07 pdf N en Mar 22, 2016 302435339416912908 Package Information D N 98ASB15607C, NI-C, 1.34x0.39x3.76, Pitch 1.1, 3 Pins false 0 MMRF1009H downloads zh-Hans true 1 Y PSP 封装信息 2 /docs/en/package-information/98ASB16718C.pdf 2016-10-31 E1003176922206 PSP 2 Mar 22, 2016 Package Information NI-780S, 465A-06 None /docs/en/package-information/98ASB16718C.pdf English documents 43526 None 302435339416912908 2022-12-07 N /docs/en/package-information/98ASB16718C.pdf 98ASB16718C, NI-C, 0.81x0.39x3.76, Pitch 14.6, 3 Pins /docs/en/package-information/98ASB16718C.pdf documents 302435339416912908 Package Information N en None D pdf J N N 98ASB16718C, NI-C, 0.81x0.39x3.76, Pitch 14.6, 3 Pins 43.5 KB SOT1793-1 N E1003176922206 /docs/en/package-information/98ASB15607C.pdf 2016-10-31 U1003176831092 PSP 3 Mar 22, 2016 Package Information NI-780 None /docs/en/package-information/98ASB15607C.pdf English documents 44100 None 302435339416912908 2022-12-07 N /docs/en/package-information/98ASB15607C.pdf 98ASB15607C, NI-C, 1.34x0.39x3.76, Pitch 1.1, 3 Pins /docs/en/package-information/98ASB15607C.pdf documents 302435339416912908 Package Information N en None D pdf H N N 98ASB15607C, NI-C, 1.34x0.39x3.76, Pitch 1.1, 3 Pins 44.1 KB SOT1792-1 N U1003176831092 数据手册 1 /docs/en/data-sheet/MMRF1009H.pdf 2016-10-31 1387569756099698470895 PSP 1 Jan 2, 2014 Data Sheet The MMRF1009HR5 and MMRF1009HSR5 are RF power transistors designed for applications operating at frequencies from 900 to 1215 MHz. These devices are suitable for use in defense and commercial pulse applications, such as IFF and DME. None /docs/en/data-sheet/MMRF1009H.pdf English documents 843772 None 980000996212993340 2023-12-05 N /docs/en/data-sheet/MMRF1009H.pdf ARCHIVED - MMRF1009HR5, MMRF1009HSR5 960-1215 MHz, 500 W, 50 V Pulse Lateral N-Channel RF Power MOSFETs - Data Sheet /docs/en/data-sheet/MMRF1009H.pdf documents 980000996212993340 Data Sheet N en None Y pdf 0 N N ARCHIVED - MMRF1009HR5, MMRF1009HSR5 960-1215 MHz, 500 W, 50 V Pulse Lateral N-Channel RF Power MOSFETs - Data Sheet 843.8 KB MMRF1009H N 1387569756099698470895 true Y Products

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