MMRF1008H_960-1215 MHz, 275 W, 50 V Pulse | NXP 半导体

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960-1215 MHz, 275 W, 50 V Pulse Lateral N-Channel RF Power MOSFETs

MMRF1008H
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RF Power transistors, MMRF1008H, MMRF1008HS and MMRF1008GH are designed for applications operating at frequencies from 900 and 1215 MHz. These devices are suitable for use in defense and commercial pulse applications, such as IFF and DME.

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特征

  • Typical Pulse Performance: VDD = 50 Vdc, IDQ = 100 mA, Pout = 275 W Peak (27.5 Watts Avg.), f = 1030 MHz, Pulse Width = 128 µsec, Duty Cycle = 10%
    Power Gain: 20.3 dB
    Drain Efficiency: 65.5%
  • Capable of Handling 10:1 VSWR, @ 50 Vdc, 1030 MHz, 275 W Peak Power
  • Typical Broadband Performance: VDD = 50 Vdc, IDQ = 100 mA, Pout = 250 W Peak (25 Watts Avg.), f = 960–1215 MHz, Pulse Width = 128 µsec, Duty Cycle = 10%
    Power Gain: 19.8 dB
    Drain Efficiency: 58%
  • Characterized with Series Equivalent Large–Signal Impedance Parameters
  • Internally Matched for Ease of Use
  • Qualified Up to a Maximum of 50 VDD Operation
  • Integrated ESD Protection
  • Greater Negative Gate-Source Voltage Range for Improved Class C Operation
  • RoHS Compliant
  • These products are included in Our product longevity program with assured supply for a minimum of 10 years after launch.
N true 0 PSPMMRF1008Hzh 4 封装信息 Package Information t790 3 数据手册 Data Sheet t520 1 zh 0 false zh zh 数据手册 Data Sheet 1 1 1 English MMRF1008H, MMRF1008HS, MMRF1008GH 275 W pulse, 900-1215 MHz, RF power LDMOS transistor for defense and commercial pulse applications, such as IFF and DME. 1387489513644702676648 PSP 1.2 MB None None documents None 1387489513644702676648 /docs/en/data-sheet/MMRF1008H.pdf 1219870 /docs/en/data-sheet/MMRF1008H.pdf MMRF1008H documents N N 2016-10-31 ARCHIVED - MMRF1008H 960-1215 MHz, 275 W, 50 V Data Sheet /docs/en/data-sheet/MMRF1008H.pdf /docs/en/data-sheet/MMRF1008H.pdf Data Sheet N 980000996212993340 2023-12-05 pdf N en May 15, 2016 980000996212993340 Data Sheet Y N ARCHIVED - MMRF1008H 960-1215 MHz, 275 W, 50 V Data Sheet 封装信息 Package Information 3 2 A English 1463646707424715856801 PSP 50.9 KB None None documents None 1463646707424715856801 /docs/en/package-information/98ASA00961D.pdf 50929 /docs/en/package-information/98ASA00961D.pdf SOT1873-1 documents N N 2016-10-31 98ASA00961D, NI-C, 34.05x9.8x34.03, Pitch 27.94, 3 Pins /docs/en/package-information/98ASA00961D.pdf /docs/en/package-information/98ASA00961D.pdf Package Information N 302435339416912908 2022-12-07 pdf N en May 5, 2016 302435339416912908 Package Information D N 98ASA00961D, NI-C, 34.05x9.8x34.03, Pitch 27.94, 3 Pins 3 J English NI-780S, 465A-06 E1003176922206 PSP 43.5 KB None None documents None E1003176922206 /docs/en/package-information/98ASB16718C.pdf 43526 /docs/en/package-information/98ASB16718C.pdf SOT1793-1 documents N N 2016-10-31 98ASB16718C, NI-C, 0.81x0.39x3.76, Pitch 14.6, 3 Pins /docs/en/package-information/98ASB16718C.pdf /docs/en/package-information/98ASB16718C.pdf Package Information N 302435339416912908 2022-12-07 pdf N en Mar 22, 2016 302435339416912908 Package Information D N 98ASB16718C, NI-C, 0.81x0.39x3.76, Pitch 14.6, 3 Pins 4 H English NI-780 U1003176831092 PSP 44.1 KB None None documents None U1003176831092 /docs/en/package-information/98ASB15607C.pdf 44100 /docs/en/package-information/98ASB15607C.pdf SOT1792-1 documents N N 2016-10-31 98ASB15607C, NI-C, 1.34x0.39x3.76, Pitch 1.1, 3 Pins /docs/en/package-information/98ASB15607C.pdf /docs/en/package-information/98ASB15607C.pdf Package Information N 302435339416912908 2022-12-07 pdf N en Mar 22, 2016 302435339416912908 Package Information D N 98ASB15607C, NI-C, 1.34x0.39x3.76, Pitch 1.1, 3 Pins false 0 MMRF1008H downloads zh-Hans true 1 Y PSP 封装信息 3 /docs/en/package-information/98ASA00961D.pdf 2016-10-31 1463646707424715856801 PSP 2 May 5, 2016 Package Information None /docs/en/package-information/98ASA00961D.pdf English documents 50929 None 302435339416912908 2022-12-07 N /docs/en/package-information/98ASA00961D.pdf 98ASA00961D, NI-C, 34.05x9.8x34.03, Pitch 27.94, 3 Pins /docs/en/package-information/98ASA00961D.pdf documents 302435339416912908 Package Information N en None D pdf A N N 98ASA00961D, NI-C, 34.05x9.8x34.03, Pitch 27.94, 3 Pins 50.9 KB SOT1873-1 N 1463646707424715856801 /docs/en/package-information/98ASB16718C.pdf 2016-10-31 E1003176922206 PSP 3 Mar 22, 2016 Package Information NI-780S, 465A-06 None /docs/en/package-information/98ASB16718C.pdf English documents 43526 None 302435339416912908 2022-12-07 N /docs/en/package-information/98ASB16718C.pdf 98ASB16718C, NI-C, 0.81x0.39x3.76, Pitch 14.6, 3 Pins /docs/en/package-information/98ASB16718C.pdf documents 302435339416912908 Package Information N en None D pdf J N N 98ASB16718C, NI-C, 0.81x0.39x3.76, Pitch 14.6, 3 Pins 43.5 KB SOT1793-1 N E1003176922206 /docs/en/package-information/98ASB15607C.pdf 2016-10-31 U1003176831092 PSP 4 Mar 22, 2016 Package Information NI-780 None /docs/en/package-information/98ASB15607C.pdf English documents 44100 None 302435339416912908 2022-12-07 N /docs/en/package-information/98ASB15607C.pdf 98ASB15607C, NI-C, 1.34x0.39x3.76, Pitch 1.1, 3 Pins /docs/en/package-information/98ASB15607C.pdf documents 302435339416912908 Package Information N en None D pdf H N N 98ASB15607C, NI-C, 1.34x0.39x3.76, Pitch 1.1, 3 Pins 44.1 KB SOT1792-1 N U1003176831092 数据手册 1 /docs/en/data-sheet/MMRF1008H.pdf 2016-10-31 1387489513644702676648 PSP 1 May 15, 2016 Data Sheet MMRF1008H, MMRF1008HS, MMRF1008GH 275 W pulse, 900-1215 MHz, RF power LDMOS transistor for defense and commercial pulse applications, such as IFF and DME. None /docs/en/data-sheet/MMRF1008H.pdf English documents 1219870 None 980000996212993340 2023-12-05 N /docs/en/data-sheet/MMRF1008H.pdf ARCHIVED - MMRF1008H 960-1215 MHz, 275 W, 50 V Data Sheet /docs/en/data-sheet/MMRF1008H.pdf documents 980000996212993340 Data Sheet N en None Y pdf 1 N N ARCHIVED - MMRF1008H 960-1215 MHz, 275 W, 50 V Data Sheet 1.2 MB MMRF1008H N 1387489513644702676648 true Y Products

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