设计文件
收到完整的详细信息。 请参阅产品足迹及更多信息 电子CAD文件.
960-1215 MHz, 275 W, 50 V Pulse Lateral N-Channel RF Power MOSFETs
- 本页面包含有关样品阶段产品的信息。此处的规格和信息如有更改，恕不另行通知。如需了解其他信息，请联系支持人员或您的销售代表。
RF Power transistors, MMRF1008H, MMRF1008HS and MMRF1008GH are designed for applications operating at frequencies from 900 and 1215 MHz. These devices are suitable for use in defense and commercial pulse applications, such as IFF and DME.
NI-780H-2L, NI-780S-2L, NI-780GH-2L Package Image
产品详情
特征
- Typical Pulse Performance: VDD = 50 Vdc, IDQ = 100 mA, Pout = 275 W Peak (27.5 Watts Avg.), f = 1030 MHz, Pulse Width = 128 µsec, Duty Cycle = 10%
- Power Gain: 20.3 dB
- Drain Efficiency: 65.5%
- Capable of Handling 10:1 VSWR, @ 50 Vdc, 1030 MHz, 275 W Peak Power
- Typical Broadband Performance: VDD = 50 Vdc, IDQ = 100 mA, Pout = 250 W Peak (25 Watts Avg.), f = 960–1215 MHz, Pulse Width = 128 µsec, Duty Cycle = 10%
- Power Gain: 19.8 dB
- Drain Efficiency: 58%
- Characterized with Series Equivalent Large–Signal Impedance Parameters
- Internally Matched for Ease of Use
- Qualified Up to a Maximum of 50 VDD Operation
- Integrated ESD Protection
- Greater Negative Gate-Source Voltage Range for Improved Class C Operation
- RoHS Compliant
- These products are included in Our product longevity program with assured supply for a minimum of 10 years after launch.
