920-960 MHz,72 W连续波,28 V GSM,GSM EDGE射频功率LDMOS | NXP 半导体

920-960 MHz,72 W连续波,28 V GSM,GSM EDGE射频功率LDMOS

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N true 0 PSPMRF8S9100Hzh 1 数据手册 Data Sheet t520 1 zh zh zh 数据手册 Data Sheet 1 1 1 English Designed for GSM and GSM EDGE base station applications with frequencies from 865 to 960 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats. 1254258498624710651380 PSP 496.1 KB None None documents None 1254258498624710651380 /docs/en/data-sheet/MRF8S9100H.pdf 496120 /docs/en/data-sheet/MRF8S9100H.pdf MRF8S9100H documents N N 2016-10-31 ARCHIVED - MRF8S9100HR3, MRF8S9100HSR3 920-960 MHz, 72 W CW, 28 V GSM, GSM EDGE Lateral N-Channel RF Power MOSFETs /docs/en/data-sheet/MRF8S9100H.pdf /docs/en/data-sheet/MRF8S9100H.pdf Data Sheet N 980000996212993340 2022-12-07 pdf N en Oct 7, 2010 980000996212993340 Data Sheet Y N ARCHIVED - MRF8S9100HR3, MRF8S9100HSR3 920-960 MHz, 72 W CW, 28 V GSM, GSM EDGE Lateral N-Channel RF Power MOSFETs false 0 MRF8S9100H downloads zh-Hans true 1 Y PSP 数据手册 1 /docs/en/data-sheet/MRF8S9100H.pdf 2016-10-31 1254258498624710651380 PSP 1 Oct 7, 2010 Data Sheet Designed for GSM and GSM EDGE base station applications with frequencies from 865 to 960 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats. None /docs/en/data-sheet/MRF8S9100H.pdf English documents 496120 None 980000996212993340 2022-12-07 N /docs/en/data-sheet/MRF8S9100H.pdf ARCHIVED - MRF8S9100HR3, MRF8S9100HSR3 920-960 MHz, 72 W CW, 28 V GSM, GSM EDGE Lateral N-Channel RF Power MOSFETs /docs/en/data-sheet/MRF8S9100H.pdf documents 980000996212993340 Data Sheet N en None Y pdf 1 N N ARCHIVED - MRF8S9100HR3, MRF8S9100HSR3 920-960 MHz, 72 W CW, 28 V GSM, GSM EDGE Lateral N-Channel RF Power MOSFETs 496.1 KB MRF8S9100H N 1254258498624710651380 true Y Products

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