920-960 MHz,50 W平均值,28 V单载波W-CDMA射频功率LDMOS | NXP 半导体

920-960 MHz,50 W平均值,28 V单载波W-CDMA射频功率LDMOS

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N true 0 PSPMRF8S9170Nzh 1 数据手册 Data Sheet t520 1 zh zh zh 数据手册 Data Sheet 1 1 1 English Designed for CDMA base station applications with frequencies from 920 to 960 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats. 1254346008936690606979 PSP 469.3 KB None None documents None 1254346008936690606979 /docs/en/data-sheet/MRF8S9170N.pdf 469279 /docs/en/data-sheet/MRF8S9170N.pdf MRF8S9170N documents N N 2016-10-31 ARCHIVED - MRF8S9170NR3 920-960 MHz, 50 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFET /docs/en/data-sheet/MRF8S9170N.pdf /docs/en/data-sheet/MRF8S9170N.pdf Data Sheet N 980000996212993340 2022-12-07 pdf N en May 19, 2010 980000996212993340 Data Sheet Y N ARCHIVED - MRF8S9170NR3 920-960 MHz, 50 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFET false 0 MRF8S9170N downloads zh-Hans true 1 Y PSP 数据手册 1 /docs/en/data-sheet/MRF8S9170N.pdf 2016-10-31 1254346008936690606979 PSP 1 May 19, 2010 Data Sheet Designed for CDMA base station applications with frequencies from 920 to 960 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats. None /docs/en/data-sheet/MRF8S9170N.pdf English documents 469279 None 980000996212993340 2022-12-07 N /docs/en/data-sheet/MRF8S9170N.pdf ARCHIVED - MRF8S9170NR3 920-960 MHz, 50 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFET /docs/en/data-sheet/MRF8S9170N.pdf documents 980000996212993340 Data Sheet N en None Y pdf 1 N N ARCHIVED - MRF8S9170NR3 920-960 MHz, 50 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFET 469.3 KB MRF8S9170N N 1254346008936690606979 true Y Products

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