920-960 MHz, 25 W Avg., 28 V Single W-CDMA RF LDMOS Wideband Integrated Power Amplifiers

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The MDE6IC9120NR1 and MDE6IC9120GNR1 wideband integrated circuits are designed with on-chip matching that make them usable from 920 to 960 MHz. This multi-stage structure is rated for 26 to 32 Volt operation and covers all typical cellular base station modulation formats.

数据手册

应用笔记

产品详情

RF Performance Table

900 MHz

Typical Doherty Single-Carrier W-CDMA Performance: V_DD = 28 Volts, I_DQ1A = I_DQ1B = 90 mA, I_DQ2A = 550 mA, V_G2B = 1.6 Vdc, Pout = 25 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF.

Frequency	G_ps (dB)	PAE (%)	Output PAR (dB)	ACPR (dBc)
920 MHz	32.5	38.4	6.6	–39.0
940 MHz	32.0	38.0	6.7	–40.4
960 MHz	31.3	37.7	7.0	–39.6

Capable of Handling 10:1 VSWR, @ 32 Vdc, 940 MHz, 146 Watts CW Output Power (3 dB Input Overdrive from Rated Pout), Designed for Enhanced Ruggedness
Stable into a 5:1 VSWR. All Spurs Below –60 dBc @ 100 mW to 120 Watts CW Pout
Typical Pout @ 1 dB Compression Point ≃ 120 Watts CW

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1-5 / 6 文件

^数据手册
MDE6IC9120NR1, MDE6IC9120GNR1 920-960 MHz, 25 W Avg., 28 V Single W-CDMA RF LDMOS Wideband Integrated Power Amplifiers

PDF版本 0Nov 12, 2009331.7 KBMDE6IC9120NEnglish
^应用笔记
Quiescent Current Control for the RF Integrated Circuit Device Family - AN1987

PDF版本 1May 12, 2004140.7 KBAN1987English
^应用笔记
Quiescent Current Control for the RF Integrated Circuit Device Family - AN1977

PDF版本 0Oct 9, 2003134.6 KBAN1977English
^{工程设计要点}
Using Data Sheet Impedances for RF LDMOS Devices

PDF版本 0Jan 19, 2004171.0 KBEB212English
^封装信息
98ASA10740D, TO, 23.62x9.02x3.18, Pitch 1.02, 17 Pins

PDF版本 EMar 18, 201682.7 KBSOT1725-1English
^封装信息
98ASA10739D, TO-WBL, 23.55x9.05x3.17, Pitch 9.02, 16 Pins

PDF版本 EMar 18, 201677.7 KBSOT1728-1English

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设计资源

设计文件

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3 设计文件

^模型
MDE6IC9120N RF High-Power Model ADS Product Model Design Kit

ZIP版本 2Jun 17, 2019 00:00:001.5 MBMDE6IC9120N_MDL_ADS
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^模型
MDE6IC9120NR1, MDE6IC9120GNR1 S-parameters

S2P版本 0Oct 20, 2009 00:00:0068.5 KBMDE6IC9120N_SP
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RF High Power Model ADS Model Kit goto: Click the Download button to select.

HTML版本 1Sep 20, 2016 00:00:00785 BRF_HIGH_POWER_MODEL_ADS_KIT
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920-960 MHz, 25 W Avg., 28 V Single W-CDMA RF LDMOS Wideband Integrated Power Amplifiers

产品详情

RF Performance Table

900 MHz

文档

过滤方式

MDE6IC9120NR1, MDE6IC9120GNR1 920-960 MHz, 25 W Avg., 28 V Single W-CDMA RF LDMOS Wideband Integrated Power Amplifiers

Quiescent Current Control for the RF Integrated Circuit Device Family - AN1987

Quiescent Current Control for the RF Integrated Circuit Device Family - AN1977

Using Data Sheet Impedances for RF LDMOS Devices

98ASA10740D, TO, 23.62x9.02x3.18, Pitch 1.02, 17 Pins

98ASA10739D, TO-WBL, 23.55x9.05x3.17, Pitch 9.02, 16 Pins

设计资源

设计文件

过滤方式

MDE6IC9120N RF High-Power Model ADS Product Model Design Kit

MDE6IC9120NR1, MDE6IC9120GNR1 S-parameters

RF High Power Model ADS Model Kit goto: Click the Download button to select.

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