920-960 MHz,100 W平均值,28 V单载波W-CDMA射频功率LDMOS | NXP 半导体

920-960 MHz,100 W平均值,28 V单载波W-CDMA射频功率LDMOS

  • 本页面包含有关样品阶段产品的信息。此处的规格和信息如有更改,恕不另行通知。如需了解其他信息,请联系支持人员或您的销售代表。

滚动图片以放大

N true 0 PSPMRF8P9300Hzh 1 数据手册 Data Sheet t520 1 zh zh zh 数据手册 Data Sheet 1 1 1.1 English Designed for CDMA and multicarrier GSM base station applications with frequencies from 860 to 960 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats. 1257441046862719114168 PSP 857.5 KB None None documents None 1257441046862719114168 /docs/en/data-sheet/MRF8P9300H.pdf 857491 /docs/en/data-sheet/MRF8P9300H.pdf MRF8P9300H documents N N 2016-10-31 ARCHIVED - MRF8P9300HR6, MRF8P9300HSR6 920-960 MHz, 100 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFETs /docs/en/data-sheet/MRF8P9300H.pdf /docs/en/data-sheet/MRF8P9300H.pdf Data Sheet N 980000996212993340 2022-12-07 pdf N en Jul 27, 2010 980000996212993340 Data Sheet Y N ARCHIVED - MRF8P9300HR6, MRF8P9300HSR6 920-960 MHz, 100 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFETs false 0 MRF8P9300H downloads zh-Hans true 1 Y PSP 数据手册 1 /docs/en/data-sheet/MRF8P9300H.pdf 2016-10-31 1257441046862719114168 PSP 1 Jul 27, 2010 Data Sheet Designed for CDMA and multicarrier GSM base station applications with frequencies from 860 to 960 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats. None /docs/en/data-sheet/MRF8P9300H.pdf English documents 857491 None 980000996212993340 2022-12-07 N /docs/en/data-sheet/MRF8P9300H.pdf ARCHIVED - MRF8P9300HR6, MRF8P9300HSR6 920-960 MHz, 100 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFETs /docs/en/data-sheet/MRF8P9300H.pdf documents 980000996212993340 Data Sheet N en None Y pdf 1.1 N N ARCHIVED - MRF8P9300HR6, MRF8P9300HSR6 920-960 MHz, 100 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFETs 857.5 KB MRF8P9300H N 1257441046862719114168 true Y Products

文档

快速参考恩智浦 文档类别.

1 文件

支持

您需要什么帮助?

近期查看的产品

查看或编辑浏览历史