880 MHz,35 W平均值,28 V,单载波N-CDMA横向N信道射频功率MOSFET | NXP 半导体

880 MHz,35 W平均值,28 V,单载波N-CDMA横向N信道射频功率MOSFET

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N true 0 PSPMRFE6S9160Hzh 1 数据手册 Data Sheet t520 1 zh zh zh 数据手册 Data Sheet 1 1 1 English Designed for N-CDMA, GSM and GSM EDGE base station applications with frequencies from 865 to 960 MHz. Suitable for multicarrier amplifier applications. 1173480794630695032544 PSP 509.1 KB None None documents None 1173480794630695032544 /docs/en/data-sheet/MRFE6S9160H.pdf 509140 /docs/en/data-sheet/MRFE6S9160H.pdf MRFE6S9160H documents N N 2016-10-31 ARCHIVED - MRFE6S9160HR3, MRFE6S9160HSR3 880 MHz, 35 W Avg., 28 V Single N-CDMA Lateral N-Channel RF Power MOSFETs /docs/en/data-sheet/MRFE6S9160H.pdf /docs/en/data-sheet/MRFE6S9160H.pdf Data Sheet N 980000996212993340 2022-12-07 pdf N en Dec 31, 2008 980000996212993340 Data Sheet Y N ARCHIVED - MRFE6S9160HR3, MRFE6S9160HSR3 880 MHz, 35 W Avg., 28 V Single N-CDMA Lateral N-Channel RF Power MOSFETs false 0 MRFE6S9160H downloads zh-Hans true 1 Y PSP 数据手册 1 /docs/en/data-sheet/MRFE6S9160H.pdf 2016-10-31 1173480794630695032544 PSP 1 Dec 31, 2008 Data Sheet Designed for N-CDMA, GSM and GSM EDGE base station applications with frequencies from 865 to 960 MHz. Suitable for multicarrier amplifier applications. None /docs/en/data-sheet/MRFE6S9160H.pdf English documents 509140 None 980000996212993340 2022-12-07 N /docs/en/data-sheet/MRFE6S9160H.pdf ARCHIVED - MRFE6S9160HR3, MRFE6S9160HSR3 880 MHz, 35 W Avg., 28 V Single N-CDMA Lateral N-Channel RF Power MOSFETs /docs/en/data-sheet/MRFE6S9160H.pdf documents 980000996212993340 Data Sheet N en None Y pdf 1 N N ARCHIVED - MRFE6S9160HR3, MRFE6S9160HSR3 880 MHz, 35 W Avg., 28 V Single N-CDMA Lateral N-Channel RF Power MOSFETs 509.1 KB MRFE6S9160H N 1173480794630695032544 true Y Products

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