960 MHz，100 W，26 V GSM/GSM EDGE LDMOS宽带射频集成功率放大器

文档

快速参考恩智浦文档类别.

10 文件

紧凑列表

98ASA10650D, TO, 17.65x9.25x2.59, Pitch 0.36, 14 Pins[SOT1720-2]

PDFMar 18, 2016版本更新 B
98ASA10649D, TO, 23.65x9.25x2.59, Pitch 9.02, 14 Pins[SOT1721-1]

PDFFeb 26, 2016版本更新 B

AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages[AN1907]

PDFMay 13, 2009版本更新 3
Clamping of High Power RF Transistors and RFICs in Over-Molded Plastic Packages[AN3789]

PDFMar 12, 2009版本更新 0
Bolt Down Mounting Method for High Power RF Transistors and RFICs in Over-Molded Plastic Packages[AN3263]

PDFJun 7, 2006版本更新 0
Quiescent Current Control for the RF Integrated Circuit Device Family - AN1987[AN1987]

PDFMay 12, 2004版本更新 1
Quiescent Current Control for the RF Integrated Circuit Device Family - AN1977[AN1977]

PDFOct 9, 2003版本更新 0

MWE6IC9100NBR1 960 MHz, 100 W, 26 V GSM/GSM EDGE RF LDMOS Wideband Integrated Power Amplifier[MWE6IC9100N-2]

PDFOct 31, 2011版本更新 6
MWE6IC9100NR1 960 MHz, 100 W, 26 V GSM/GSM EDGE RF LDMOS Wideband Integrated Power Amplifier[MWE6IC9100N-1]

PDFOct 31, 2011版本更新 4.1

Advances in Airfast RFICs White Paper[AIRFASTWBFWP]

PDFMay 15, 2015版本更新 0

设计资源

设计文件

快速参考恩智浦设计文件类型.

3 设计文件

模型
RF High Power Model ADS Model Kit goto: Click the Download button to select.

HTML版本 1Sep 20, 2016785 BRF_HIGH_POWER_MODEL_ADS_KIT
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模型
MWE6IC9100NBR1, MWE6IC9100NR1 RF High-Power Model ADS Product Model Design Kit

ZIP版本 2Jun 17, 20191.8 MBMWE6IC9100N_MDL_ADS

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计算器
MWE6IC9100NBR1, MWE6IC9100NR1 RF Power Electromigration MTTF Calculation Program

XLS版本 1Feb 12, 200744.5 KBMWE6IC9100N_MTTF_CALC

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3 设计文件

模型
RF High Power Model ADS Model Kit goto: Click the Download button to select.

HTML版本 1Sep 20, 2016 00:00:00785 BRF_HIGH_POWER_MODEL_ADS_KIT
下载Toggle Dropdown
- 加入列队
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模型
MWE6IC9100NBR1, MWE6IC9100NR1 RF High-Power Model ADS Product Model Design Kit

ZIP版本 2Jun 17, 2019 00:00:001.8 MBMWE6IC9100N_MDL_ADS

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计算器
MWE6IC9100NBR1, MWE6IC9100NR1 RF Power Electromigration MTTF Calculation Program

XLS版本 1Feb 12, 2007 00:00:0044.5 KBMWE6IC9100N_MTTF_CALC

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960 MHz，100 W，26 V GSM/GSM EDGE LDMOS宽带射频集成功率放大器

文档

过滤方式

封装信息 (2)

98ASA10650D, TO, 17.65x9.25x2.59, Pitch 0.36, 14 Pins[SOT1720-2]

98ASA10649D, TO, 23.65x9.25x2.59, Pitch 9.02, 14 Pins[SOT1721-1]

应用笔记 (5)

AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages[AN1907]

Clamping of High Power RF Transistors and RFICs in Over-Molded Plastic Packages[AN3789]

Bolt Down Mounting Method for High Power RF Transistors and RFICs in Over-Molded Plastic Packages[AN3263]

Quiescent Current Control for the RF Integrated Circuit Device Family - AN1987[AN1987]

Quiescent Current Control for the RF Integrated Circuit Device Family - AN1977[AN1977]

数据手册 (2)

MWE6IC9100NBR1 960 MHz, 100 W, 26 V GSM/GSM EDGE RF LDMOS Wideband Integrated Power Amplifier[MWE6IC9100N-2]

MWE6IC9100NR1 960 MHz, 100 W, 26 V GSM/GSM EDGE RF LDMOS Wideband Integrated Power Amplifier[MWE6IC9100N-1]

白皮书 (1)

Advances in Airfast RFICs White Paper[AIRFASTWBFWP]

过滤方式

封装信息 (2)

98ASA10650D, TO, 17.65x9.25x2.59, Pitch 0.36, 14 Pins[SOT1720-2]

98ASA10649D, TO, 23.65x9.25x2.59, Pitch 9.02, 14 Pins[SOT1721-1]

应用笔记 (5)

AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages[AN1907]

Clamping of High Power RF Transistors and RFICs in Over-Molded Plastic Packages[AN3789]

Bolt Down Mounting Method for High Power RF Transistors and RFICs in Over-Molded Plastic Packages[AN3263]

Quiescent Current Control for the RF Integrated Circuit Device Family - AN1987[AN1987]

Quiescent Current Control for the RF Integrated Circuit Device Family - AN1977[AN1977]

数据手册 (2)

MWE6IC9100NBR1 960 MHz, 100 W, 26 V GSM/GSM EDGE RF LDMOS Wideband Integrated Power Amplifier[MWE6IC9100N-2]

MWE6IC9100NR1 960 MHz, 100 W, 26 V GSM/GSM EDGE RF LDMOS Wideband Integrated Power Amplifier[MWE6IC9100N-1]

白皮书 (1)

Advances in Airfast RFICs White Paper[AIRFASTWBFWP]

设计资源

设计文件

过滤方式

RF High Power Model ADS Model Kit goto: Click the Download button to select.

MWE6IC9100NBR1, MWE6IC9100NR1 RF High-Power Model ADS Product Model Design Kit

MWE6IC9100NBR1, MWE6IC9100NR1 RF Power Electromigration MTTF Calculation Program

过滤方式

筛选条件

RF High Power Model ADS Model Kit goto: Click the Download button to select.

MWE6IC9100NBR1, MWE6IC9100NR1 RF High-Power Model ADS Product Model Design Kit

MWE6IC9100NBR1, MWE6IC9100NR1 RF Power Electromigration MTTF Calculation Program

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