746-960 MHz, 30 W, 26-28 V Single N-CDMA, GSM/GSM EDGE RF LDMOS Wideband Integrated Power Amplifiers | NXP 半导体

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746-960 MHz, 30 W, 26-28 V Single N-CDMA, GSM/GSM EDGE RF LDMOS Wideband Integrated Power Amplifiers

MWIC930N
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The MWIC930NR1 and MWIC930GNR1 wideband integrated circuits are designed for CDMA and GSM/GSM EDGE applications. They use Our newest High Voltage (26 to 28 Volts) LDMOS IC technology and integrate a multi–stage structure. Their wideband On-Chip integral matching circuitry makes them usable from 790 to 1000 MHz. The linearity performances cover all modulations for cellular applications: GSM, GSM EDGE, TDMA, N–CDMA and W–CDMA.

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特征

    Final Application
  • Typical Performance @ P1dB: VDD = 26 Volts, IDQ1 = 90 mA, IDQ2 = 240 mA, Pout = 30 Watts P1dB, Full Frequency Band (921–960 MHz)
    Power Gain: 30 dB
    Power Added Efficiency: 45%
    • Driver Application
  • Typical Single–Carrier N–CDMA Performance: VDD = 27 Volts, IDQ1 = 90 mA, IDQ2 = 240 mA, Pout = 5 Watts Avg., Full Frequency Band (865–894 MHz), IS–95 (Pilot, Sync, Paging, Traffic Codes 8 Through 13), Channel Bandwidth = 1.2288 MHz. PAR = 9.8 dB @ 0.01% Probability on CCDF.
    Power Gain: 31 dB
    Power Added Efficiency: 21%
    ACPR @ 750 kHz Offset:  –52 dBc in 30 kHz Bandwidth
  • Capable of Handling 5:1 VSWR, @ 26 Vdc, 921 MHz, 30 Watts CW Output Power
  • Characterized with Series Equivalent Large-Signal Impedance Parameters
  • On-Chip Matching (50 Ohm Input, DC Blocked, >4 Ohm Output)
  • Integrated Quiescent Current Temperature Compensation with Enable/Disable Function
  • On-Chip Current Mirror gm Reference FET for Self Biasing Application
  • Integrated ESD Protection
  • 200°C Capable Plastic Package
  • N Suffix Indicates Lead-Free Terminations. RoHS Compliant.
  • In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
N true 0 PSPMWIC930Nzh 8 封装信息 Package Information t790 2 应用笔记 Application Note t789 5 数据手册 Data Sheet t520 1 zh 0 false zh zh 数据手册 Data Sheet 1 1 6 English MWIC930 wideband integrated circuit is designed for CDMA and GSM/GSM EDGE applications. It uses NXP<sup>&#174;</sup>. newest High Voltage (26 to 28 Volts) LDMOS IC technology and integrates a multi-stage structure. 1148576000780711931136 PSP 633.1 KB None None documents None 1148576000780711931136 /docs/en/data-sheet/MWIC930N.pdf 633089 /docs/en/data-sheet/MWIC930N.pdf MWIC930N documents N 2006-06-04 MWIC930NR1, MWIC930GNR1 746-960 MHz, 30 W, 26-28 V Single N-CDMA, GSM/GSM EDGE RF LDMOS Wideband Integrated Power Amplifiers /docs/en/data-sheet/MWIC930N.pdf /docs/en/data-sheet/MWIC930N.pdf Data Sheet N 980000996212993340 2022-12-07 pdf en May 25, 2006 980000996212993340 Data Sheet Y N MWIC930NR1, MWIC930GNR1 746-960 MHz, 30 W, 26-28 V Single N-CDMA, GSM/GSM EDGE RF LDMOS Wideband Integrated Power Amplifiers 应用笔记 Application Note 5 2 3 English I989356375600 PSP 910.7 KB None None documents None I989356375600 /docs/en/application-note/AN1907.pdf 910737 /docs/en/application-note/AN1907.pdf AN1907 documents N N 2016-11-09 AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages /docs/en/application-note/AN1907.pdf /docs/en/application-note/AN1907.pdf Application Note N 645036621402383989 2025-01-28 pdf N en May 13, 2009 645036621402383989 Application Note Y N AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages 3 0 English This application note provides NXP Semiconductors customers with a guide for mounting high power RF transistors and integrated circuits in Over-Molded Plastic (OMP) packages by clamping down the RF power device in the Power Amplifier (PA) housing. 1236894638615715664840 PSP 449.7 KB None None documents None 1236894638615715664840 /docs/en/application-note/AN3789.pdf 449688 /docs/en/application-note/AN3789.pdf AN3789 documents N N 2016-10-31 Clamping of High Power RF Transistors and RFICs in Over-Molded Plastic Packages /docs/en/application-note/AN3789.pdf /docs/en/application-note/AN3789.pdf Application Note N 645036621402383989 2024-03-13 pdf N en Mar 12, 2009 645036621402383989 Application Note Y N Clamping of High Power RF Transistors and RFICs in Over-Molded Plastic Packages 4 0 English Bolt Down Mounting Method for High Power RF Transistors and RFICs in Over-Molded Plastic Packages 1149802174784738095879 PSP 8.3 MB None None documents None 1149802174784738095879 /docs/en/application-note/AN3263.pdf 8285724 /docs/en/application-note/AN3263.pdf AN3263 documents N N 2016-10-31 Bolt Down Mounting Method for High Power RF Transistors and RFICs in Over-Molded Plastic Packages /docs/en/application-note/AN3263.pdf /docs/en/application-note/AN3263.pdf Application Note N 645036621402383989 2022-12-07 pdf N en Jun 7, 2006 645036621402383989 Application Note Y N Bolt Down Mounting Method for High Power RF Transistors and RFICs in Over-Molded Plastic Packages 5 1 English This application note introduces a bias control circuit that can be used with the NXP<sup>&#174;</sup> family of RF integrated circuits. 1078170496490702478807 PSP 140.7 KB None None documents None 1078170496490702478807 /docs/en/application-note/AN1987.pdf 140747 /docs/en/application-note/AN1987.pdf AN1987 documents N N 2016-10-31 Quiescent Current Control for the RF Integrated Circuit Device Family - AN1987 /docs/en/application-note/AN1987.pdf /docs/en/application-note/AN1987.pdf Application Note N 645036621402383989 2024-03-13 pdf N en May 12, 2004 645036621402383989 Application Note Y N Quiescent Current Control for the RF Integrated Circuit Device Family - AN1987 6 0 English Using Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit to maintain constant quiescent current over a large temperature range. 1065730389394721762372 PSP 134.6 KB None None documents None 1065730389394721762372 /docs/en/application-note/AN1977.pdf 134579 /docs/en/application-note/AN1977.pdf AN1977 documents N N 2016-10-31 Quiescent Current Control for the RF Integrated Circuit Device Family - AN1977 /docs/en/application-note/AN1977.pdf /docs/en/application-note/AN1977.pdf Application Note N 645036621402383989 2024-03-13 pdf N en Oct 9, 2003 645036621402383989 Application Note Y N Quiescent Current Control for the RF Integrated Circuit Device Family - AN1977 封装信息 Package Information 2 7 R English 1329-09, TO-272 Wide Body Multi-Lead Y1002571238784 PSP 81.8 KB None None documents None Y1002571238784 /docs/en/package-information/98ARH99164A.pdf 81763 /docs/en/package-information/98ARH99164A.pdf SOT1727-1 documents N N 2016-10-31 98ARH99164A, TO-WB, 9.02x23.62x2.59, Pitch 0.04, 17 Pins /docs/en/package-information/98ARH99164A.pdf /docs/en/package-information/98ARH99164A.pdf Package Information N 302435339416912908 2022-12-07 pdf N en Feb 29, 2016 302435339416912908 Package Information D N 98ARH99164A, TO-WB, 9.02x23.62x2.59, Pitch 0.04, 17 Pins 8 F English 98ASA10532D, 1329A-04, TO-272WB, 16 Lead Gull Wing Plastic D1031331826047 PSP 60.7 KB None None documents None D1031331826047 /docs/en/package-information/98ASA10532D.pdf 60684 /docs/en/package-information/98ASA10532D.pdf SOT1724-1 documents N N 2016-10-31 98ASA10532D, 1329A-04, TO-272WB 16 Lead Gull Wing Plastic /docs/en/package-information/98ASA10532D.pdf /docs/en/package-information/98ASA10532D.pdf Package Information N 302435339416912908 2022-12-07 pdf N en Jun 30, 2007 302435339416912908 Package Information D N 98ASA10532D, 1329A-04, TO-272WB 16 Lead Gull Wing Plastic false 0 MWIC930N downloads zh-Hans true 1 Y PSP 封装信息 2 /docs/en/package-information/98ARH99164A.pdf 2016-10-31 Y1002571238784 PSP 7 Feb 29, 2016 Package Information 1329-09, TO-272 Wide Body Multi-Lead None /docs/en/package-information/98ARH99164A.pdf English documents 81763 None 302435339416912908 2022-12-07 N /docs/en/package-information/98ARH99164A.pdf 98ARH99164A, TO-WB, 9.02x23.62x2.59, Pitch 0.04, 17 Pins /docs/en/package-information/98ARH99164A.pdf documents 302435339416912908 Package Information N en None D pdf R N N 98ARH99164A, TO-WB, 9.02x23.62x2.59, Pitch 0.04, 17 Pins 81.8 KB SOT1727-1 N Y1002571238784 /docs/en/package-information/98ASA10532D.pdf 2016-10-31 D1031331826047 PSP 8 Jun 30, 2007 Package Information 98ASA10532D, 1329A-04, TO-272WB, 16 Lead Gull Wing Plastic None /docs/en/package-information/98ASA10532D.pdf English documents 60684 None 302435339416912908 2022-12-07 N /docs/en/package-information/98ASA10532D.pdf 98ASA10532D, 1329A-04, TO-272WB 16 Lead Gull Wing Plastic /docs/en/package-information/98ASA10532D.pdf documents 302435339416912908 Package Information N en None D pdf F N N 98ASA10532D, 1329A-04, TO-272WB 16 Lead Gull Wing Plastic 60.7 KB SOT1724-1 N D1031331826047 应用笔记 5 /docs/en/application-note/AN1907.pdf 2016-11-09 I989356375600 PSP 2 May 13, 2009 Application Note None /docs/en/application-note/AN1907.pdf English documents 910737 None 645036621402383989 2025-01-28 N /docs/en/application-note/AN1907.pdf AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages /docs/en/application-note/AN1907.pdf documents 645036621402383989 Application Note N en None Y pdf 3 N N AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages 910.7 KB AN1907 N I989356375600 /docs/en/application-note/AN3789.pdf 2016-10-31 1236894638615715664840 PSP 3 Mar 12, 2009 Application Note This application note provides NXP Semiconductors customers with a guide for mounting high power RF transistors and integrated circuits in Over-Molded Plastic (OMP) packages by clamping down the RF power device in the Power Amplifier (PA) housing. None /docs/en/application-note/AN3789.pdf English documents 449688 None 645036621402383989 2024-03-13 N /docs/en/application-note/AN3789.pdf Clamping of High Power RF Transistors and RFICs in Over-Molded Plastic Packages /docs/en/application-note/AN3789.pdf documents 645036621402383989 Application Note N en None Y pdf 0 N N Clamping of High Power RF Transistors and RFICs in Over-Molded Plastic Packages 449.7 KB AN3789 N 1236894638615715664840 /docs/en/application-note/AN3263.pdf 2016-10-31 1149802174784738095879 PSP 4 Jun 7, 2006 Application Note Bolt Down Mounting Method for High Power RF Transistors and RFICs in Over-Molded Plastic Packages None /docs/en/application-note/AN3263.pdf English documents 8285724 None 645036621402383989 2022-12-07 N /docs/en/application-note/AN3263.pdf Bolt Down Mounting Method for High Power RF Transistors and RFICs in Over-Molded Plastic Packages /docs/en/application-note/AN3263.pdf documents 645036621402383989 Application Note N en None Y pdf 0 N N Bolt Down Mounting Method for High Power RF Transistors and RFICs in Over-Molded Plastic Packages 8.3 MB AN3263 N 1149802174784738095879 /docs/en/application-note/AN1987.pdf 2016-10-31 1078170496490702478807 PSP 5 May 12, 2004 Application Note This application note introduces a bias control circuit that can be used with the NXP<sup>&#174;</sup> family of RF integrated circuits. None /docs/en/application-note/AN1987.pdf English documents 140747 None 645036621402383989 2024-03-13 N /docs/en/application-note/AN1987.pdf Quiescent Current Control for the RF Integrated Circuit Device Family - AN1987 /docs/en/application-note/AN1987.pdf documents 645036621402383989 Application Note N en None Y pdf 1 N N Quiescent Current Control for the RF Integrated Circuit Device Family - AN1987 140.7 KB AN1987 N 1078170496490702478807 /docs/en/application-note/AN1977.pdf 2016-10-31 1065730389394721762372 PSP 6 Oct 9, 2003 Application Note Using Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit to maintain constant quiescent current over a large temperature range. None /docs/en/application-note/AN1977.pdf English documents 134579 None 645036621402383989 2024-03-13 N /docs/en/application-note/AN1977.pdf Quiescent Current Control for the RF Integrated Circuit Device Family - AN1977 /docs/en/application-note/AN1977.pdf documents 645036621402383989 Application Note N en None Y pdf 0 N N Quiescent Current Control for the RF Integrated Circuit Device Family - AN1977 134.6 KB AN1977 N 1065730389394721762372 数据手册 1 /docs/en/data-sheet/MWIC930N.pdf 2006-06-04 1148576000780711931136 PSP 1 May 25, 2006 Data Sheet MWIC930 wideband integrated circuit is designed for CDMA and GSM/GSM EDGE applications. It uses NXP<sup>&#174;</sup>. newest High Voltage (26 to 28 Volts) LDMOS IC technology and integrates a multi-stage structure. None /docs/en/data-sheet/MWIC930N.pdf English documents 633089 None 980000996212993340 2022-12-07 /docs/en/data-sheet/MWIC930N.pdf MWIC930NR1, MWIC930GNR1 746-960 MHz, 30 W, 26-28 V Single N-CDMA, GSM/GSM EDGE RF LDMOS Wideband Integrated Power Amplifiers /docs/en/data-sheet/MWIC930N.pdf documents 980000996212993340 Data Sheet N en None Y pdf 6 N MWIC930NR1, MWIC930GNR1 746-960 MHz, 30 W, 26-28 V Single N-CDMA, GSM/GSM EDGE RF LDMOS Wideband Integrated Power Amplifiers 633.1 KB MWIC930N N 1148576000780711931136 true Y Products

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