The MMRF1315NR1 is designed for wideband defense, industrial and commercial applications with frequencies up to 1000 MHz. The high gain and broadband performance of this device are ideal for large-signal, common-source amplifier applications in 28 V RF systems.
Ntrue0PSPMMRF1315Nzh1数据手册Data Sheett5201zhzhzh数据手册Data Sheet110EnglishThe MMRF1315NR1 is designed for wideband defense, industrial and commercial applications
with frequencies up to 1000 MHz. The high gain and broadband performance of this device
are ideal for large-signal, common-source amplifier applications in 28 V RF systems.
1406566618777714835057PSP808.3 KBNoneNonedocumentsNone1406566618777714835057/docs/en/data-sheet/MMRF1315N.pdf808335/docs/en/data-sheet/MMRF1315N.pdfMMRF1315NdocumentsNN2016-10-31ARCHIVED - MMRF1315NR1 500-1000 MHz, 60 W CW, 28 V Broadband RF Power LDMOS Transistor
- Data Sheet
/docs/en/data-sheet/MMRF1315N.pdf/docs/en/data-sheet/MMRF1315N.pdfData SheetN9800009962129933402022-12-07pdfNenJul 25, 2014980000996212993340Data SheetYNARCHIVED - MMRF1315NR1 500-1000 MHz, 60 W CW, 28 V Broadband RF Power LDMOS Transistor
- Data Sheet
false0MMRF1315Ndownloadszh-Hanstrue1YPSP数据手册1/docs/en/data-sheet/MMRF1315N.pdf2016-10-311406566618777714835057PSP1Jul 25, 2014Data SheetThe MMRF1315NR1 is designed for wideband defense, industrial and commercial applications
with frequencies up to 1000 MHz. The high gain and broadband performance of this device
are ideal for large-signal, common-source amplifier applications in 28 V RF systems.
None/docs/en/data-sheet/MMRF1315N.pdfEnglishdocuments808335None9800009962129933402022-12-07N/docs/en/data-sheet/MMRF1315N.pdfARCHIVED - MMRF1315NR1 500-1000 MHz, 60 W CW, 28 V Broadband RF Power LDMOS Transistor
- Data Sheet
/docs/en/data-sheet/MMRF1315N.pdfdocuments980000996212993340Data SheetNenNoneYpdf0NNARCHIVED - MMRF1315NR1 500-1000 MHz, 60 W CW, 28 V Broadband RF Power LDMOS Transistor
- Data Sheet
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