2700-2900 MHz,320 W,30 V横向N信道宽带射频功率MOSFET | NXP 半导体

2700-2900 MHz,320 W,30 V横向N信道宽带射频功率MOSFET

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特征

  • 典型脉冲性能:VDD = 30 V,IDQ = 100 mA
    信号类型 输出功率
    (W)
    f
    (MHz)
    Gps
    (dB)
    ηD
    (%)
    IRL
    (dB)
    脉冲(100 µsec,
    10%占空比)
    320峰值 2900 13.3 50.5 –17
  • 在32 Vdc,2900 MHz,320 W连续波峰值功率,300 µsec,10%空占比(3 dB过驱额定输出功率)时,能承受10:1 VSWR
  • 提供串联等效大信号阻抗参数
  • 内部匹配,简便易用
  • 工作电压最高可达32 VDD
  • 集成的ESD保护
  • 专为推挽操作而设计
  • 增大负栅源电压范围,改善C类放大器运行
  • 符合RoHS规范
  • 采用盘卷包装。R6后缀 = 150个,56 mm卷带宽度,13英寸卷盘。

RF Performance Table

Typical Pulse Performance

VDD = 30 Volts, IDQ = 100 mA
  • Capable of Handling 10:1 VSWR, @ 32 Vdc, 2900 MHz, 320 Watts Peak Power, 300 µsec, 10% Duty Cycle (3 dB Input Overdrive from Rated Pout)
N true 0 PSPMRF8P29300Hzh 3 封装信息 Package Information t790 2 数据手册 Data Sheet t520 1 zh zh zh 数据手册 Data Sheet 1 1 0 English RF Power transistors designed for applications operating at frequencies between 2700 and 2900 MHz. These devices are suitable for use in pulsed applications. 1298582985656716942870 PSP 1.1 MB None None documents None 1298582985656716942870 /docs/en/data-sheet/MRF8P29300H.pdf 1093273 /docs/en/data-sheet/MRF8P29300H.pdf MRF8P29300H documents N N 2016-10-31 ARCHIVED - MRF8P29300HR6, MRF8P29300HSR6 2700-2900 MHz, 320 W, 30 V Lateral N-Channel Broadband RF Power MOSFETs /docs/en/data-sheet/MRF8P29300H.pdf /docs/en/data-sheet/MRF8P29300H.pdf Data Sheet N 980000996212993340 2024-02-09 pdf N en Feb 24, 2011 980000996212993340 Data Sheet Y N ARCHIVED - MRF8P29300HR6, MRF8P29300HSR6 2700-2900 MHz, 320 W, 30 V Lateral N-Channel Broadband RF Power MOSFETs 封装信息 Package Information 2 2 H English 98ASB16977C, NI-1230H-4S A1003176946486 PSP 159.0 KB None None documents None A1003176946486 /docs/en/package-information/98ASB16977C.pdf 159037 /docs/en/package-information/98ASB16977C.pdf SOT1787-1 documents N N 2016-10-31 98ASB16977C, NI-1230H-4S, 41.15x10.16x4.19, Pitch 13.72, 5 Pins /docs/en/package-information/98ASB16977C.pdf /docs/en/package-information/98ASB16977C.pdf Package Information N 302435339416912908 2022-12-07 pdf N en Oct 25, 2019 302435339416912908 Package Information D N 98ASB16977C, NI-1230H-4S, 41.15x10.16x4.19, Pitch 13.72, 5 Pins 3 H English 98ARB18247C, 375E-04, NI-1230S-4S B1003167510411 PSP 44.6 KB None None documents None B1003167510411 /docs/en/package-information/98ARB18247C.pdf 44578 /docs/en/package-information/98ARB18247C.pdf SOT1829-1 documents N N 2016-10-31 98ARB18247C, NI-1230S-4S, 32.26x10.16x4.19, Pitch 13.72, 5 Pins /docs/en/package-information/98ARB18247C.pdf /docs/en/package-information/98ARB18247C.pdf Package Information N 302435339416912908 2022-12-07 pdf N en Feb 23, 2016 302435339416912908 Package Information D N 98ARB18247C, NI-1230S-4S, 32.26x10.16x4.19, Pitch 13.72, 5 Pins false 0 MRF8P29300H downloads zh-Hans true 1 Y PSP 封装信息 2 /docs/en/package-information/98ASB16977C.pdf 2016-10-31 A1003176946486 PSP 2 Oct 25, 2019 Package Information 98ASB16977C, NI-1230H-4S None /docs/en/package-information/98ASB16977C.pdf English documents 159037 None 302435339416912908 2022-12-07 N /docs/en/package-information/98ASB16977C.pdf 98ASB16977C, NI-1230H-4S, 41.15x10.16x4.19, Pitch 13.72, 5 Pins /docs/en/package-information/98ASB16977C.pdf documents 302435339416912908 Package Information N en None D pdf H N N 98ASB16977C, NI-1230H-4S, 41.15x10.16x4.19, Pitch 13.72, 5 Pins 159.0 KB SOT1787-1 N A1003176946486 /docs/en/package-information/98ARB18247C.pdf 2016-10-31 B1003167510411 PSP 3 Feb 23, 2016 Package Information 98ARB18247C, 375E-04, NI-1230S-4S None /docs/en/package-information/98ARB18247C.pdf English documents 44578 None 302435339416912908 2022-12-07 N /docs/en/package-information/98ARB18247C.pdf 98ARB18247C, NI-1230S-4S, 32.26x10.16x4.19, Pitch 13.72, 5 Pins /docs/en/package-information/98ARB18247C.pdf documents 302435339416912908 Package Information N en None D pdf H N N 98ARB18247C, NI-1230S-4S, 32.26x10.16x4.19, Pitch 13.72, 5 Pins 44.6 KB SOT1829-1 N B1003167510411 数据手册 1 /docs/en/data-sheet/MRF8P29300H.pdf 2016-10-31 1298582985656716942870 PSP 1 Feb 24, 2011 Data Sheet RF Power transistors designed for applications operating at frequencies between 2700 and 2900 MHz. These devices are suitable for use in pulsed applications. None /docs/en/data-sheet/MRF8P29300H.pdf English documents 1093273 None 980000996212993340 2024-02-09 N /docs/en/data-sheet/MRF8P29300H.pdf ARCHIVED - MRF8P29300HR6, MRF8P29300HSR6 2700-2900 MHz, 320 W, 30 V Lateral N-Channel Broadband RF Power MOSFETs /docs/en/data-sheet/MRF8P29300H.pdf documents 980000996212993340 Data Sheet N en None Y pdf 0 N N ARCHIVED - MRF8P29300HR6, MRF8P29300HSR6 2700-2900 MHz, 320 W, 30 V Lateral N-Channel Broadband RF Power MOSFETs 1.1 MB MRF8P29300H N 1298582985656716942870 true Y Products

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