Typical Doherty Single-Carrier W-CDMA Characterization Performance: VDD = 28 Volts,
IDQA = 300 mA, VGSB = 1.3 Vdc, Pout = 14 Watts Avg., IQ Magnitude
Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF.
Frequency
Gps (dB)
ηD (%)
Output PAR (dB)
ACPR (dBc)
2570 MHz
15.4
39.1
6.8
–33.6
2595 MHz
15.2
38.2
6.8
–36.0
2620 MHz
15.0
36.9
6.8
–40.0
Capable of Handling 10:1 VSWR, @ 32 Vdc, 2595 MHz, 109 Watts CW Output Power (3 dB Input Overdrive from Rated Pout)
Typical Pout @ 3 dB Compression Point ≃ 83 Watts CW
Ntrue0PSPMRF8P26080Hzh1数据手册Data Sheett5201zhzhzh数据手册Data Sheet110EnglishDesigned for W-CDMA and LTE base station applications with frequencies from 2500 to
2700 MHz. Can be used in Class AB and Class C for all typical cellular base station
modulation formats.
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Lateral N-Channel RF Power MOSFETs
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Lateral N-Channel RF Power MOSFETs
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2700 MHz. Can be used in Class AB and Class C for all typical cellular base station
modulation formats.
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Lateral N-Channel RF Power MOSFETs
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Lateral N-Channel RF Power MOSFETs
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