Ntrue0PSPAFT26HW050Szh1数据手册Data Sheett5201zhzhzh数据手册Data Sheet112EnglishThe AFT26HW050SR3, AFT26HW050GSR3 and AFT26H050W26SR3 9 watt asymmetrical Doherty
RF power LDMOS transistors are designed for cellular base station applications requiring
very wide instantaneous bandwidth capability covering the frequency range of 2496
to 2690 MHz.
1367889825337706853067PSP772.8 KBNoneNonedocumentsNone1367889825337706853067/docs/en/data-sheet/AFT26HW050S.pdf772828/docs/en/data-sheet/AFT26HW050S.pdfAFT26HW050SdocumentsNN2016-10-31ARCHIVED - AFT26HW050SR3, AFT26HW050GSR3, AFT26H050W26SR3 2496-2690 MHz, 9 W Avg.,
28 V Airfast<sup>®</sup> RF Power LDMOS Transistors - Data Sheet
/docs/en/data-sheet/AFT26HW050S.pdf/docs/en/data-sheet/AFT26HW050S.pdfData SheetN9800009962129933402022-12-07pdfNenJul 30, 2013980000996212993340Data SheetYNARCHIVED - AFT26HW050SR3, AFT26HW050GSR3, AFT26H050W26SR3 2496-2690 MHz, 9 W Avg.,
28 V Airfast<sup>®</sup> RF Power LDMOS Transistors - Data Sheet
false0AFT26HW050Sdownloadszh-Hanstrue1YPSP数据手册1/docs/en/data-sheet/AFT26HW050S.pdf2016-10-311367889825337706853067PSP1Jul 30, 2013Data SheetThe AFT26HW050SR3, AFT26HW050GSR3 and AFT26H050W26SR3 9 watt asymmetrical Doherty
RF power LDMOS transistors are designed for cellular base station applications requiring
very wide instantaneous bandwidth capability covering the frequency range of 2496
to 2690 MHz.
None/docs/en/data-sheet/AFT26HW050S.pdfEnglishdocuments772828None9800009962129933402022-12-07N/docs/en/data-sheet/AFT26HW050S.pdfARCHIVED - AFT26HW050SR3, AFT26HW050GSR3, AFT26H050W26SR3 2496-2690 MHz, 9 W Avg.,
28 V Airfast<sup>®</sup> RF Power LDMOS Transistors - Data Sheet
/docs/en/data-sheet/AFT26HW050S.pdfdocuments980000996212993340Data SheetNenNoneYpdf2NNARCHIVED - AFT26HW050SR3, AFT26HW050GSR3, AFT26H050W26SR3 2496-2690 MHz, 9 W Avg.,
28 V Airfast<sup>®</sup> RF Power LDMOS Transistors - Data Sheet
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