A2T26H165-24S_2496-2690 MHz,32 W平均值,28 V | NXP 半导体

2496-2690 MHz,32W平均值,28 V Airfast® LDMOS射频功率晶体管

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RF Performance Table

2600 MHz

典型Doherty单载波W-CDMA性能:VDD = 28 Vdc,IDQA = 400 mA,VGSB = 0.7 Vdc,平均输出功率 = 32 W,输入信号PAR = 9.9 dB @ 0.01% CCDF。
N true 0 PSPA2T26H165-24Szh 1 数据手册 Data Sheet t520 1 zh zh zh 数据手册 Data Sheet 1 1 0 English A2T26H165-24S 2496-2690 MHz, 32 W Avg., 28 V Airfast<sup>&#174;</sup> RF power LDMOS transistor for cellular base stations 1451319163577714919096 PSP 431.8 KB None None documents None 1451319163577714919096 /docs/en/data-sheet/A2T26H165-24S.pdf 431848 /docs/en/data-sheet/A2T26H165-24S.pdf A2T26H165-24S documents N N 2016-10-31 ARCHIVED - A2T26H165-24S 2496-2690 MHz, 32 W Avg, 28 V Data Sheet /docs/en/data-sheet/A2T26H165-24S.pdf /docs/en/data-sheet/A2T26H165-24S.pdf Data Sheet N 980000996212993340 2022-12-07 pdf N en Dec 23, 2015 980000996212993340 Data Sheet Y N ARCHIVED - A2T26H165-24S 2496-2690 MHz, 32 W Avg, 28 V Data Sheet false 0 A2T26H165-24S downloads zh-Hans true 1 Y PSP 数据手册 1 /docs/en/data-sheet/A2T26H165-24S.pdf 2016-10-31 1451319163577714919096 PSP 1 Dec 23, 2015 Data Sheet A2T26H165-24S 2496-2690 MHz, 32 W Avg., 28 V Airfast<sup>&#174;</sup> RF power LDMOS transistor for cellular base stations None /docs/en/data-sheet/A2T26H165-24S.pdf English documents 431848 None 980000996212993340 2022-12-07 N /docs/en/data-sheet/A2T26H165-24S.pdf ARCHIVED - A2T26H165-24S 2496-2690 MHz, 32 W Avg, 28 V Data Sheet /docs/en/data-sheet/A2T26H165-24S.pdf documents 980000996212993340 Data Sheet N en None Y pdf 0 N N ARCHIVED - A2T26H165-24S 2496-2690 MHz, 32 W Avg, 28 V Data Sheet 431.8 KB A2T26H165-24S N 1451319163577714919096 true Y Products

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