MRF6S24140H_140 W连续波, 2450 MHz, 28 V | NXP 半导体

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2450 MHz，140 W，28 V连续波横向N沟道射频功率MOSFET

MRF6S24140H
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MRF6S24140HR3和MRF6S24140HSR3专为2450 MHz的大信号输出应用而设计。这些器件适用于工业、医疗和科学应用。
N true 0 PSPMRF6S24140Hzh 3 封装信息 Package Information t790 2 数据手册 Data Sheet t520 1 zh zh zh 数据手册 Data Sheet 1 1 4 English Designed primarily for large-signal output applications at 2450 MHz. Devices are suitable for use in industrial, medical and scientific applications. 1172848492941691017727 PSP 400.0 KB None None documents None 1172848492941691017727 /docs/en/data-sheet/MRF6S24140H.pdf 399994 /docs/en/data-sheet/MRF6S24140H.pdf MRF6S24140H documents N 2007-03-02 MRF6S24140HR3, MRF6S24140HSR3 2450 MHz, 140 W, 28 V CW Lateral N-Channel RF Power MOSFETs /docs/en/data-sheet/MRF6S24140H.pdf /docs/en/data-sheet/MRF6S24140H.pdf Data Sheet N 980000996212993340 2022-12-07 pdf en Feb 23, 2012 980000996212993340 Data Sheet Y N MRF6S24140HR3, MRF6S24140HSR3 2450 MHz, 140 W, 28 V CW Lateral N-Channel RF Power MOSFETs 封装信息 Package Information 2 2 F English 98ARB18660C, 465C-03, NI-880S V1003168558543 PSP 41.4 KB None None documents None V1003168558543 /docs/en/package-information/98ARB18660C.pdf 41407 /docs/en/package-information/98ARB18660C.pdf SOT1789-1 documents N N 2016-10-31 98ARB18660C, NI-C, 0.9x0.54x0.2, Pitch 1.4, 2 Pins /docs/en/package-information/98ARB18660C.pdf /docs/en/package-information/98ARB18660C.pdf Package Information N 302435339416912908 2022-12-07 pdf N en Mar 1, 2016 302435339416912908 Package Information D N 98ARB18660C, NI-C, 0.9x0.54x0.2, Pitch 1.4, 2 Pins 3 G English 465B-04, NI-880 G1003167536858 PSP 47.3 KB None None documents None G1003167536858 /docs/en/package-information/98ARB18493C.pdf 47346 /docs/en/package-information/98ARB18493C.pdf SOT1788-1 documents N N 2016-10-31 98ARB18493C, NI-C, 1.34x0.54x0.2, Pitch 1.44, 3 Pins /docs/en/package-information/98ARB18493C.pdf /docs/en/package-information/98ARB18493C.pdf Package Information N 302435339416912908 2022-12-07 pdf N en Feb 4, 2016 302435339416912908 Package Information D N 98ARB18493C, NI-C, 1.34x0.54x0.2, Pitch 1.44, 3 Pins false 0 MRF6S24140H downloads zh-Hans true 1 Y PSP 封装信息 2 /docs/en/package-information/98ARB18660C.pdf 2016-10-31 V1003168558543 PSP 2 Mar 1, 2016 Package Information 98ARB18660C, 465C-03, NI-880S None /docs/en/package-information/98ARB18660C.pdf English documents 41407 None 302435339416912908 2022-12-07 N /docs/en/package-information/98ARB18660C.pdf 98ARB18660C, NI-C, 0.9x0.54x0.2, Pitch 1.4, 2 Pins /docs/en/package-information/98ARB18660C.pdf documents 302435339416912908 Package Information N en None D pdf F N N 98ARB18660C, NI-C, 0.9x0.54x0.2, Pitch 1.4, 2 Pins 41.4 KB SOT1789-1 N V1003168558543 /docs/en/package-information/98ARB18493C.pdf 2016-10-31 G1003167536858 PSP 3 Feb 4, 2016 Package Information 465B-04, NI-880 None /docs/en/package-information/98ARB18493C.pdf English documents 47346 None 302435339416912908 2022-12-07 N /docs/en/package-information/98ARB18493C.pdf 98ARB18493C, NI-C, 1.34x0.54x0.2, Pitch 1.44, 3 Pins /docs/en/package-information/98ARB18493C.pdf documents 302435339416912908 Package Information N en None D pdf G N N 98ARB18493C, NI-C, 1.34x0.54x0.2, Pitch 1.44, 3 Pins 47.3 KB SOT1788-1 N G1003167536858 数据手册 1 /docs/en/data-sheet/MRF6S24140H.pdf 2007-03-02 1172848492941691017727 PSP 1 Feb 23, 2012 Data Sheet Designed primarily for large-signal output applications at 2450 MHz. Devices are suitable for use in industrial, medical and scientific applications. None /docs/en/data-sheet/MRF6S24140H.pdf English documents 399994 None 980000996212993340 2022-12-07 /docs/en/data-sheet/MRF6S24140H.pdf MRF6S24140HR3, MRF6S24140HSR3 2450 MHz, 140 W, 28 V CW Lateral N-Channel RF Power MOSFETs /docs/en/data-sheet/MRF6S24140H.pdf documents 980000996212993340 Data Sheet N en None Y pdf 4 N MRF6S24140HR3, MRF6S24140HSR3 2450 MHz, 140 W, 28 V CW Lateral N-Channel RF Power MOSFETs 400.0 KB MRF6S24140H N 1172848492941691017727 true Y Products

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