AFT23H201-24S_2300-2400 MHz，45 W平均值，28 V | NXP 半导体

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2300-2400 MHz，45 W平均值，28 V Airfast® LDMOS射频功率晶体管

AFT23H201-24S
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AFT23H201-24SR6 45 W非对称Doherty LDMOS射频功率晶体管专为2300到2400 MHz频率范围的移动通信基站应用而设计。

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RF Performance Table

2300 MHz

典型Doherty单载波W-CDMA性能：VDD = 28 Vdc，IDQA = 500 mA，VGSB = 0.8 Vdc，平均输出功率 = 45 W，输入信号PAR = 9.9 dB @ 0.01% CCDF。
频率 Gps
(dB)		 ηD
(%)		 输出PAR
(dB)		 ACPR
(dBc)
2300 MHz15.646.28.1–28.9
2350 MHz15.946.58.1–30.4
2400 MHz16.145.38.0–33.9
N true 0 PSPAFT23H201-24Szh 3 封装信息 Package Information t790 1 应用笔记 Application Note t789 1 数据手册 Data Sheet t520 1 zh zh zh 数据手册 Data Sheet 1 1 0 English AFT23H201-24S 2300-2400 MHz, 45 W Avg, 28 V Airfast<sup>&reg;</sup> RF power LDMOS transistor for cellular base stations 1469628152472702265867 PSP 392.1 KB None None documents None 1469628152472702265867 /docs/en/data-sheet/AFT23H201-24S.pdf 392117 /docs/en/data-sheet/AFT23H201-24S.pdf AFT23H201-24S documents N N 2016-07-27 AFT23H201-24S 2300-2400 MHz, 45 W Avg, 28 V Data Sheet /docs/en/data-sheet/AFT23H201-24S.pdf /docs/en/data-sheet/AFT23H201-24S.pdf Data Sheet N 980000996212993340 2022-12-07 pdf N en Jul 22, 2016 980000996212993340 Data Sheet Y N AFT23H201-24S 2300-2400 MHz, 45 W Avg, 28 V Data Sheet 应用笔记 Application Note 1 2 1 English The purpose of this application note is to provide NXP Semiconductors customers with a guideline for solder reflow mounting of high power RF transistors and integrated circuits in Air Cavity Packages (ACP). S989356392744 PSP 664.6 KB None None documents None S989356392744 /docs/en/application-note/AN1908.pdf 664592 /docs/en/application-note/AN1908.pdf AN1908 documents N N 2016-10-31 AN1908 - Solder Reflow Attach Method for High Power RF Devices in Air Cavity Packages /docs/en/application-note/AN1908.pdf /docs/en/application-note/AN1908.pdf Application Note N 645036621402383989 2024-03-13 pdf N en Feb 24, 2011 645036621402383989 Application Note Y N AN1908 - Solder Reflow Attach Method for High Power RF Devices in Air Cavity Packages 封装信息 Package Information 1 3 O English 1433549388763716952759 PSP 75.1 KB None None documents None 1433549388763716952759 /docs/en/package-information/98ASA00812D.pdf 75142 /docs/en/package-information/98ASA00812D.pdf SOT1800-2 documents N N 2016-10-31 98ASA00812D, NI-C, 32.26x10.16x4.14, Pitch 0.54, 7 Pins /docs/en/package-information/98ASA00812D.pdf /docs/en/package-information/98ASA00812D.pdf Package Information N 302435339416912908 2022-12-07 pdf N en Jun 5, 2015 302435339416912908 Package Information D N 98ASA00812D, NI-C, 32.26x10.16x4.14, Pitch 0.54, 7 Pins false 0 AFT23H201-24S downloads zh-Hans true 1 Y PSP 封装信息 1 /docs/en/package-information/98ASA00812D.pdf 2016-10-31 1433549388763716952759 PSP 3 Jun 5, 2015 Package Information None /docs/en/package-information/98ASA00812D.pdf English documents 75142 None 302435339416912908 2022-12-07 N /docs/en/package-information/98ASA00812D.pdf 98ASA00812D, NI-C, 32.26x10.16x4.14, Pitch 0.54, 7 Pins /docs/en/package-information/98ASA00812D.pdf documents 302435339416912908 Package Information N en None D pdf O N N 98ASA00812D, NI-C, 32.26x10.16x4.14, Pitch 0.54, 7 Pins 75.1 KB SOT1800-2 N 1433549388763716952759 应用笔记 1 /docs/en/application-note/AN1908.pdf 2016-10-31 S989356392744 PSP 2 Feb 24, 2011 Application Note The purpose of this application note is to provide NXP Semiconductors customers with a guideline for solder reflow mounting of high power RF transistors and integrated circuits in Air Cavity Packages (ACP). None /docs/en/application-note/AN1908.pdf English documents 664592 None 645036621402383989 2024-03-13 N /docs/en/application-note/AN1908.pdf AN1908 - Solder Reflow Attach Method for High Power RF Devices in Air Cavity Packages /docs/en/application-note/AN1908.pdf documents 645036621402383989 Application Note N en None Y pdf 1 N N AN1908 - Solder Reflow Attach Method for High Power RF Devices in Air Cavity Packages 664.6 KB AN1908 N S989356392744 数据手册 1 /docs/en/data-sheet/AFT23H201-24S.pdf 2016-07-27 1469628152472702265867 PSP 1 Jul 22, 2016 Data Sheet AFT23H201-24S 2300-2400 MHz, 45 W Avg, 28 V Airfast<sup>&reg;</sup> RF power LDMOS transistor for cellular base stations None /docs/en/data-sheet/AFT23H201-24S.pdf English documents 392117 None 980000996212993340 2022-12-07 N /docs/en/data-sheet/AFT23H201-24S.pdf AFT23H201-24S 2300-2400 MHz, 45 W Avg, 28 V Data Sheet /docs/en/data-sheet/AFT23H201-24S.pdf documents 980000996212993340 Data Sheet N en None Y pdf 0 N N AFT23H201-24S 2300-2400 MHz, 45 W Avg, 28 V Data Sheet 392.1 KB AFT23H201-24S N 1469628152472702265867 true Y Products

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