Ntrue0PSPMRF6S19140Hzh1数据手册Data Sheett5201zhzhzh数据手册Data Sheet115EnglishDesigned for PCN and PCS base station applications with frequencies from 1930 to 1990
MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications.
1102456903373717699415PSP415.5 KBNoneNonedocumentsNone1102456903373717699415/docs/en/data-sheet/MRF6S19140H.pdf415507/docs/en/data-sheet/MRF6S19140H.pdfMRF6S19140HdocumentsNN2016-10-31ARCHIVED - MRF6S19140HR3, MRF6S19140HSR3 1930-1990 MHz, 29 W Avg., 28 V, 2 x N-CDMA
Lateral N-Channel RF Power MOSFETs
/docs/en/data-sheet/MRF6S19140H.pdf/docs/en/data-sheet/MRF6S19140H.pdfData SheetN9800009962129933402022-12-07pdfNenMay 30, 2007980000996212993340Data SheetYNARCHIVED - MRF6S19140HR3, MRF6S19140HSR3 1930-1990 MHz, 29 W Avg., 28 V, 2 x N-CDMA
Lateral N-Channel RF Power MOSFETs
false0MRF6S19140Hdownloadszh-Hanstrue1YPSP数据手册1/docs/en/data-sheet/MRF6S19140H.pdf2016-10-311102456903373717699415PSP1May 30, 2007Data SheetDesigned for PCN and PCS base station applications with frequencies from 1930 to 1990
MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications.
None/docs/en/data-sheet/MRF6S19140H.pdfEnglishdocuments415507None9800009962129933402022-12-07N/docs/en/data-sheet/MRF6S19140H.pdfARCHIVED - MRF6S19140HR3, MRF6S19140HSR3 1930-1990 MHz, 29 W Avg., 28 V, 2 x N-CDMA
Lateral N-Channel RF Power MOSFETs
/docs/en/data-sheet/MRF6S19140H.pdfdocuments980000996212993340Data SheetNenNoneYpdf5NNARCHIVED - MRF6S19140HR3, MRF6S19140HSR3 1930-1990 MHz, 29 W Avg., 28 V, 2 x N-CDMA
Lateral N-Channel RF Power MOSFETs
415.5 KBMRF6S19140HN1102456903373717699415trueYProducts