1930-1990 MHz,29 W平均值,28 V,双载波N-CDMA射频功率LDMOS | NXP 半导体

1930-1990 MHz,29 W平均值,28 V,双载波N-CDMA射频功率LDMOS

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N true 0 PSPMRF6S19140Hzh 1 数据手册 Data Sheet t520 1 zh zh zh 数据手册 Data Sheet 1 1 5 English Designed for PCN and PCS base station applications with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. 1102456903373717699415 PSP 415.5 KB None None documents None 1102456903373717699415 /docs/en/data-sheet/MRF6S19140H.pdf 415507 /docs/en/data-sheet/MRF6S19140H.pdf MRF6S19140H documents N N 2016-10-31 ARCHIVED - MRF6S19140HR3, MRF6S19140HSR3 1930-1990 MHz, 29 W Avg., 28 V, 2 x N-CDMA Lateral N-Channel RF Power MOSFETs /docs/en/data-sheet/MRF6S19140H.pdf /docs/en/data-sheet/MRF6S19140H.pdf Data Sheet N 980000996212993340 2022-12-07 pdf N en May 30, 2007 980000996212993340 Data Sheet Y N ARCHIVED - MRF6S19140HR3, MRF6S19140HSR3 1930-1990 MHz, 29 W Avg., 28 V, 2 x N-CDMA Lateral N-Channel RF Power MOSFETs false 0 MRF6S19140H downloads zh-Hans true 1 Y PSP 数据手册 1 /docs/en/data-sheet/MRF6S19140H.pdf 2016-10-31 1102456903373717699415 PSP 1 May 30, 2007 Data Sheet Designed for PCN and PCS base station applications with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. None /docs/en/data-sheet/MRF6S19140H.pdf English documents 415507 None 980000996212993340 2022-12-07 N /docs/en/data-sheet/MRF6S19140H.pdf ARCHIVED - MRF6S19140HR3, MRF6S19140HSR3 1930-1990 MHz, 29 W Avg., 28 V, 2 x N-CDMA Lateral N-Channel RF Power MOSFETs /docs/en/data-sheet/MRF6S19140H.pdf documents 980000996212993340 Data Sheet N en None Y pdf 5 N N ARCHIVED - MRF6S19140HR3, MRF6S19140HSR3 1930-1990 MHz, 29 W Avg., 28 V, 2 x N-CDMA Lateral N-Channel RF Power MOSFETs 415.5 KB MRF6S19140H N 1102456903373717699415 true Y Products

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