1805-2170 MHz, 20 W CW, 28 V RF LDMOS Wideband Integrated Power Amplifier
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The MMRF2006NT1 wideband integrated circuit is designed with on-chip matching that makes it usable from 1805 to 2170 MHz. This multi-stage structure is rated for 26 to 32 V operation and can be used in many RF amplifier modulation formats.
产品详情
RF Performance Tables
Driver Application — 2100 MHz
Typical Single-Carrier W-CDMA Performance: VDD = 28 Vdc, IDQ1 = 40 mA, IDQ2 = 230 mA, Pout = 2.4 W Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF.| Frequency | Gps (dB) |
PAE (%) |
Output PAR (dB) |
ACPR (dBc) |
| 2110 MHz | 32.6 | 16.8 | 7.7 | –51.3 |
| 2140 MHz | 32.6 | 17.0 | 7.6 | –51.4 |
| 2170 MHz | 32.4 | 17.0 | 7.5 | –51.6 |
- Capable of Handling 10:1 VSWR @ 32 Vdc, 2140 MHz, Pout = 33 W CW (3 dB Input Overdrive from Rated Pout)
- Typical Pout @ 1 dB Compression Point ≃ 20 W CW
Driver Application — 1800 MHz
Typical Single-Carrier W-CDMA Performance: VDD = 28 Vdc, IDQ1 = 40 mA, IDQ2 = 230 mA, Pout = 2.4 W Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF.| Frequency | Gps (dB) |
PAE (%) |
Output PAR (dB) |
ACPR (dBc) |
| 1805 MHz | 31.8 | 17.4 | 7.6 | –51.2 |
| 1840 MHz | 31.8 | 17.4 | 7.7 | –50.2 |
| 1880 MHz | 31.8 | 17.4 | 7.7 | –51.0 |