A2T18H455W23N_1805-1880 MHz,87 W平均值,31.5 V | NXP 半导体

1805-1880 MHz,87 W平均值,31.5 V Airfast® LDMOS射频功率晶体管

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RF Performance Table

1800 MHz

典型Doherty单载波W-CDMA性能:VDD = 31.5 Vdc,IDQA = 1080 mA,VGSB = 0.25 Vdc,平均输出功率 = 87 W,输入信号PAR = 9.9 dB @ 0.01% CCDF。
频率 Gps
(dB)
ηD
(%)
输出PAR
(dB)
ACPR
(dBc)
1805 MHz14.548.18.1–32.7
1840 MHz15.248.28.1–33.0
1880 MHz15.948.48.0–33.8
N true 0 PSPA2T18H455W23Nzh 1 数据手册 Data Sheet t520 1 zh zh zh 数据手册 Data Sheet 1 1 0 English A2T18H455W23N 1805-1880 MHz, 87 W Avg, 31.5 V Airfast<sup>&#174;</sup> RF power LDMOS transistor for cellular base stations 1462880985941704051726 PSP 430.3 KB None None documents None 1462880985941704051726 /docs/en/data-sheet/A2T18H455W23N.pdf 430327 /docs/en/data-sheet/A2T18H455W23N.pdf A2T18H455W23N documents N N 2016-10-31 ARCHIVED - A2T18H455W23N 1805-1880 MHz, 87 W Avg, 31.5 V Data Sheet /docs/en/data-sheet/A2T18H455W23N.pdf /docs/en/data-sheet/A2T18H455W23N.pdf Data Sheet N 980000996212993340 2022-12-07 pdf N en May 9, 2016 980000996212993340 Data Sheet Y N ARCHIVED - A2T18H455W23N 1805-1880 MHz, 87 W Avg, 31.5 V Data Sheet false 0 A2T18H455W23N downloads zh-Hans true 1 Y PSP 数据手册 1 /docs/en/data-sheet/A2T18H455W23N.pdf 2016-10-31 1462880985941704051726 PSP 1 May 9, 2016 Data Sheet A2T18H455W23N 1805-1880 MHz, 87 W Avg, 31.5 V Airfast<sup>&#174;</sup> RF power LDMOS transistor for cellular base stations None /docs/en/data-sheet/A2T18H455W23N.pdf English documents 430327 None 980000996212993340 2022-12-07 N /docs/en/data-sheet/A2T18H455W23N.pdf ARCHIVED - A2T18H455W23N 1805-1880 MHz, 87 W Avg, 31.5 V Data Sheet /docs/en/data-sheet/A2T18H455W23N.pdf documents 980000996212993340 Data Sheet N en None Y pdf 0 N N ARCHIVED - A2T18H455W23N 1805-1880 MHz, 87 W Avg, 31.5 V Data Sheet 430.3 KB A2T18H455W23N N 1462880985941704051726 true Y Products

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