Ntrue0PSPMRF8S18120Hzh1数据手册Data Sheett5201zhzhzh数据手册Data Sheet111EnglishDesigned for GSM and GSM EDGE base station applications with frequencies from 1805
to 1880 MHz. Can be used in Class AB and Class C for all typical cellular base station
modulation formats.
1252002595563718076335PSP419.2 KBNoneNonedocumentsNone1252002595563718076335/docs/en/data-sheet/MRF8S18120H.pdf419243/docs/en/data-sheet/MRF8S18120H.pdfMRF8S18120HdocumentsNN2016-10-31ARCHIVED - MRF8S18120HR3, MRF8S18120HSR3 1805-1880 MHz, 72 W CW, 28 V GSM, GSM EDGE
Lateral N-Channel RF Power MOSFETs
/docs/en/data-sheet/MRF8S18120H.pdf/docs/en/data-sheet/MRF8S18120H.pdfData SheetN9800009962129933402022-12-07pdfNenOct 7, 2010980000996212993340Data SheetYNARCHIVED - MRF8S18120HR3, MRF8S18120HSR3 1805-1880 MHz, 72 W CW, 28 V GSM, GSM EDGE
Lateral N-Channel RF Power MOSFETs
false0MRF8S18120Hdownloadszh-Hanstrue1YPSP数据手册1/docs/en/data-sheet/MRF8S18120H.pdf2016-10-311252002595563718076335PSP1Oct 7, 2010Data SheetDesigned for GSM and GSM EDGE base station applications with frequencies from 1805
to 1880 MHz. Can be used in Class AB and Class C for all typical cellular base station
modulation formats.
None/docs/en/data-sheet/MRF8S18120H.pdfEnglishdocuments419243None9800009962129933402022-12-07N/docs/en/data-sheet/MRF8S18120H.pdfARCHIVED - MRF8S18120HR3, MRF8S18120HSR3 1805-1880 MHz, 72 W CW, 28 V GSM, GSM EDGE
Lateral N-Channel RF Power MOSFETs
/docs/en/data-sheet/MRF8S18120H.pdfdocuments980000996212993340Data SheetNenNoneYpdf1NNARCHIVED - MRF8S18120HR3, MRF8S18120HSR3 1805-1880 MHz, 72 W CW, 28 V GSM, GSM EDGE
Lateral N-Channel RF Power MOSFETs
419.2 KBMRF8S18120HN1252002595563718076335trueYProducts