A2T18S261W12N_1805-1880 MHz, 56 W平均值, 28 V | NXP 半导体

1805-1880 MHz,56 W平均值,28 V Airfast®LDMOS射频功率晶体管

  • 本页面包含有关样品阶段产品的信息。此处的规格和信息如有更改,恕不另行通知。如需了解其他信息,请联系支持人员或您的销售代表。

滚动图片以放大

产品详情

选择区域:

射频性能表

1800 MHz

典型单载波W-CDMA性能:VDD = 28 Vdc,IDQ = 1500 mA,平均输出功率 = 56 W,输入信号PAR = 9.9 dB @ 0.01% CCDF。
频率 Gps
(dB)
ηD
(%)
输出PAR
(dB)
ACPR
(dBc)
IRL
(dB)
1805 MHz17.734.27.0–35.1–15
1840 MHz18.134.17.1–35.2–13
1880 MHz18.234.87.1–34.6–10
N true 0 PSPA2T18S261W12Nzh 1 数据手册 Data Sheet t520 1 zh zh zh 数据手册 Data Sheet 1 1 0 English A2T18S261W12N 1805-1880 MHz, 56 W Avg., 28 V Airfast<sup>&reg;</sup> RF power LDMOS transistor for cellular base stations 1481078740665715577810 PSP 233.5 KB None None documents None 1481078740665715577810 /docs/en/data-sheet/A2T18S261W12N.pdf 233532 /docs/en/data-sheet/A2T18S261W12N.pdf A2T18S261W12N documents N N 2016-12-06 ARCHIVED - A2T18S261W12N 1805-1880 MHz, 56 W Avg, 28 V Data Sheet /docs/en/data-sheet/A2T18S261W12N.pdf /docs/en/data-sheet/A2T18S261W12N.pdf Data Sheet N 980000996212993340 2022-12-07 pdf N en Nov 30, 2016 980000996212993340 Data Sheet Y N ARCHIVED - A2T18S261W12N 1805-1880 MHz, 56 W Avg, 28 V Data Sheet false 0 A2T18S261W12N downloads zh-Hans true 1 Y PSP 数据手册 1 /docs/en/data-sheet/A2T18S261W12N.pdf 2016-12-06 1481078740665715577810 PSP 1 Nov 30, 2016 Data Sheet A2T18S261W12N 1805-1880 MHz, 56 W Avg., 28 V Airfast<sup>&reg;</sup> RF power LDMOS transistor for cellular base stations None /docs/en/data-sheet/A2T18S261W12N.pdf English documents 233532 None 980000996212993340 2022-12-07 N /docs/en/data-sheet/A2T18S261W12N.pdf ARCHIVED - A2T18S261W12N 1805-1880 MHz, 56 W Avg, 28 V Data Sheet /docs/en/data-sheet/A2T18S261W12N.pdf documents 980000996212993340 Data Sheet N en None Y pdf 0 N N ARCHIVED - A2T18S261W12N 1805-1880 MHz, 56 W Avg, 28 V Data Sheet 233.5 KB A2T18S261W12N N 1481078740665715577810 true Y Products

文档

快速参考恩智浦 文档类别.

1 文件

支持

您需要什么帮助?

近期查看的产品

There are no recently viewed products to display.

查看或编辑浏览历史