1800-2000 MHz,60 W,26 V GSM/GSM EDGE射频功率LDMOS | NXP 半导体

1800-2000 MHz,60 W,26 V GSM/GSM EDGE射频功率LDMOS

  • 本页面包含有关样品阶段产品的信息。此处的规格和信息如有更改,恕不另行通知。如需了解其他信息,请联系支持人员或您的销售代表。

滚动图片以放大

N true 0 PSPMRF6S18060Nzh 1 数据手册 Data Sheet t520 1 zh zh zh 数据手册 Data Sheet 1 1 4 English Designed for GSM and GSM EDGE base station applications with frequencies from 1800 to 2000 MHz. Suitable for TDMA, CDMA, and multicarrier amplifier applications. 1148685534143697375934 PSP 781.3 KB None None documents None 1148685534143697375934 /docs/en/data-sheet/MRF6S18060N.pdf 781323 /docs/en/data-sheet/MRF6S18060N.pdf MRF6S18060N documents N N 2016-10-31 ARCHIVED - MRF6S18060NR1, MRF6S18060NBR1 1800-2000 MHz, 60 W, 26 V GSM/GSM EDGE Lateral N-Channel RF Power MOSFETs /docs/en/data-sheet/MRF6S18060N.pdf /docs/en/data-sheet/MRF6S18060N.pdf Data Sheet N 980000996212993340 2022-12-07 pdf N en Dec 5, 2008 980000996212993340 Data Sheet Y N ARCHIVED - MRF6S18060NR1, MRF6S18060NBR1 1800-2000 MHz, 60 W, 26 V GSM/GSM EDGE Lateral N-Channel RF Power MOSFETs false 0 MRF6S18060N downloads zh-Hans true 1 Y PSP 数据手册 1 /docs/en/data-sheet/MRF6S18060N.pdf 2016-10-31 1148685534143697375934 PSP 1 Dec 5, 2008 Data Sheet Designed for GSM and GSM EDGE base station applications with frequencies from 1800 to 2000 MHz. Suitable for TDMA, CDMA, and multicarrier amplifier applications. None /docs/en/data-sheet/MRF6S18060N.pdf English documents 781323 None 980000996212993340 2022-12-07 N /docs/en/data-sheet/MRF6S18060N.pdf ARCHIVED - MRF6S18060NR1, MRF6S18060NBR1 1800-2000 MHz, 60 W, 26 V GSM/GSM EDGE Lateral N-Channel RF Power MOSFETs /docs/en/data-sheet/MRF6S18060N.pdf documents 980000996212993340 Data Sheet N en None Y pdf 4 N N ARCHIVED - MRF6S18060NR1, MRF6S18060NBR1 1800-2000 MHz, 60 W, 26 V GSM/GSM EDGE Lateral N-Channel RF Power MOSFETs 781.3 KB MRF6S18060N N 1148685534143697375934 true Y Products

文档

快速参考恩智浦 文档类别.

1 文件

支持

您需要什么帮助?

近期查看的产品

There are no recently viewed products to display.

查看或编辑浏览历史