MMRF1021N_136-941 MHz, 7 W, 7.5 V | NXP 半导体

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136-941 MHz, 7 W, 7.5 V Wideband RF Power LDMOS Transistor

MMRF1021N
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The MMRF1021NT1 is designed for handheld two-way radio applications with frequencies from 136 to 941 MHz. The high gain, ruggedness and wideband performance of this device make it ideal for large-signal, common-source amplifier applications in handheld military radio equipment.
N true 0 PSPMMRF1021Nzh 3 封装信息 Package Information t790 1 工程设计要点 Technical Notes t521 1 数据手册 Data Sheet t520 1 zh zh zh 数据手册 Data Sheet 1 1 0 English The MMRF1021NT1 is designed for handheld two-way radio applications with frequencies from 136 to 941 MHz. The high gain, ruggedness and wideband performance of this device make it ideal for large-signal, common-source amplifier applications in handheld military radio equipment. 1406324207273707867783 PSP 958.4 KB None None documents None 1406324207273707867783 /docs/en/data-sheet/MMRF1021N.pdf 958355 /docs/en/data-sheet/MMRF1021N.pdf MMRF1021N documents N 2014-07-28 MMRF1021NT1 136-941 MHz, 7 W, 7.5 V Wideband RF Power LDMOS Transistor - Data Sheet /docs/en/data-sheet/MMRF1021N.pdf /docs/en/data-sheet/MMRF1021N.pdf Data Sheet N 980000996212993340 2022-12-07 pdf en Jul 24, 2014 980000996212993340 Data Sheet Y N MMRF1021NT1 136-941 MHz, 7 W, 7.5 V Wideband RF Power LDMOS Transistor - Data Sheet 工程设计要点 Technical Notes 1 2 0 English This document explains the format used by NXP<sup>&#174;</sup> for presenting LDMOS impedance information for both single-ended and push-pull devices on RF Power datasheets. 1074535848819727693421 PSP 171.0 KB None None documents None 1074535848819727693421 /docs/en/engineering-bulletin/EB212.pdf 170979 /docs/en/engineering-bulletin/EB212.pdf EB212 documents N N 2016-11-09 Using Data Sheet Impedances for RF LDMOS Devices /docs/en/engineering-bulletin/EB212.pdf /docs/en/engineering-bulletin/EB212.pdf Technical Notes N 389245547230346745 2024-09-13 pdf N en Jan 19, 2004 389245547230346745 Technical Notes Y N Using Data Sheet Impedances for RF LDMOS Devices 封装信息 Package Information 1 3 A English 1370451903375708697913 PSP 55.3 KB None None documents None 1370451903375708697913 /docs/en/package-information/98ASA00476D.pdf 55307 /docs/en/package-information/98ASA00476D.pdf SOT1811-2 documents N N 2016-10-31 98ASA00476D, PLD-1.5W, 6.6x5.84x1.74, Pitch 4.6, 3 Pins /docs/en/package-information/98ASA00476D.pdf /docs/en/package-information/98ASA00476D.pdf Package Information N 302435339416912908 2022-12-07 pdf N en Feb 15, 2016 302435339416912908 Package Information D N 98ASA00476D, PLD-1.5W, 6.6x5.84x1.74, Pitch 4.6, 3 Pins false 0 MMRF1021N downloads zh-Hans true 1 Y PSP 封装信息 1 /docs/en/package-information/98ASA00476D.pdf 2016-10-31 1370451903375708697913 PSP 3 Feb 15, 2016 Package Information None /docs/en/package-information/98ASA00476D.pdf English documents 55307 None 302435339416912908 2022-12-07 N /docs/en/package-information/98ASA00476D.pdf 98ASA00476D, PLD-1.5W, 6.6x5.84x1.74, Pitch 4.6, 3 Pins /docs/en/package-information/98ASA00476D.pdf documents 302435339416912908 Package Information N en None D pdf A N N 98ASA00476D, PLD-1.5W, 6.6x5.84x1.74, Pitch 4.6, 3 Pins 55.3 KB SOT1811-2 N 1370451903375708697913 工程设计要点 1 /docs/en/engineering-bulletin/EB212.pdf 2016-11-09 1074535848819727693421 PSP 2 Jan 19, 2004 Technical Notes This document explains the format used by NXP<sup>&#174;</sup> for presenting LDMOS impedance information for both single-ended and push-pull devices on RF Power datasheets. None /docs/en/engineering-bulletin/EB212.pdf English documents 170979 None 389245547230346745 2024-09-13 N /docs/en/engineering-bulletin/EB212.pdf Using Data Sheet Impedances for RF LDMOS Devices /docs/en/engineering-bulletin/EB212.pdf documents 389245547230346745 Technical Notes N en None Y pdf 0 N N Using Data Sheet Impedances for RF LDMOS Devices 171.0 KB EB212 N 1074535848819727693421 数据手册 1 /docs/en/data-sheet/MMRF1021N.pdf 2014-07-28 1406324207273707867783 PSP 1 Jul 24, 2014 Data Sheet The MMRF1021NT1 is designed for handheld two-way radio applications with frequencies from 136 to 941 MHz. The high gain, ruggedness and wideband performance of this device make it ideal for large-signal, common-source amplifier applications in handheld military radio equipment. None /docs/en/data-sheet/MMRF1021N.pdf English documents 958355 None 980000996212993340 2022-12-07 /docs/en/data-sheet/MMRF1021N.pdf MMRF1021NT1 136-941 MHz, 7 W, 7.5 V Wideband RF Power LDMOS Transistor - Data Sheet /docs/en/data-sheet/MMRF1021N.pdf documents 980000996212993340 Data Sheet N en None Y pdf 0 N MMRF1021NT1 136-941 MHz, 7 W, 7.5 V Wideband RF Power LDMOS Transistor - Data Sheet 958.4 KB MMRF1021N N 1406324207273707867783 true Y Products

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