136-940 MHz, 35 W Avg., 28 V RF LDMOS Wideband Integrated Power Amplifiers
- 本页面包含有关样品阶段产品的信息。此处的规格和信息如有更改，恕不另行通知。如需了解其他信息，请联系支持人员或您的销售代表。
The MMRF2007N wideband integrated circuit is designed with on-chip pre-matching that makes it usable from 136 to 940 MHz. This multi-stage structure is rated for 26 to 32 V operation, has a 2-stage design with off-chip matching for the input and covers all typical modulation formats. This device is ideal for use in military and commercial VHF and UHF radio base station or radar driver applications.
产品详情
RF Performance Tables
Typical Two-Tone Performance
VDD1 = 28 Vdc, VDD2 = 25 Vdc, IDQ1(A+B) = 60 mA, IDQ2(A+B) = 550 mA, Pout = 35 W Avg.| Frequency | Gps (dB) |
PAE (%) |
IMD (dBc) |
| 850 MHz | 30.6 | 40.1 | –30.5 |
| 900 MHz | 31.9 | 42.4 | –31.0 |
| 940 MHz | 32.6 | 42.1 | –31.3 |
- Capable of Handling 10:1 VSWR, @ 32 Vdc, 940 MHz, 137 W CW Output Power (3 dB Input Overdrive from Rated Pout), Designed for Enhanced Ruggedness
文档
快速参考恩智浦 文档类别.