1.8-2000 MHz, 25 W, 50 V Wideband RF Power LDMOS Transistor
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MMRF1304LR5 is an RF power transistor suitable for both narrowband and broadband CW or pulse applications operating at frequencies from 1.8 to 2000 MHz, such as military radio communications and radar. This device
is fabricated using Our enhanced ruggedness platform and is suitable for use in applications where high VSWRs are encountered.
产品详情
Features
- Wide Operating Frequency Range
- Very Rugged
- Unmatched, Capable of Very Broadband Operation
- Integrated Stability Enhancements
- Low Thermal Resistance
- Extended ESD Protection Circuit
- RoHS Compliant
- In Tape and Reel. R5 Suffix = 50 Units, 32 mm Tape Width, 13-inch Reel.
RF Performance Tables
HF, 1.8-30 MHz
VDD = 50 Vdc| Frequency (MHz) |
Signal Type | Pout (W) |
Gps (dB) |
ηD (%) |
IMD (dBc) |
| 1.8 to 30(1,3) | Two-Tone (10 kHz spacing) | 25 PEP | 25.0 | 50.0 | –28 |
30-512 MHz Broadband
VDD = 50 Vdc| Frequency (MHz) |
Signal Type | Pout (W) |
Gps (dB) |
ηD (%) |
IMD (dBc) |
| 30-512(2,3) | Two-Tone (200 kHz spacing) | 25 PEP | 17.3 | 32.0 | –32 |
512 MHz Narrowband
VDD = 50 Vdc| Frequency (MHz) |
Signal Type | Pout (W) |
Gps (dB) |
ηD (%) |
| 512(4) | Pulse (100 µsec, 20% Duty Cycle) | 25 Peak | 25.9 | 74.0 |
| 512(4) | CW | 25 | 26.0 | 75.0 |
Ruggedness
| Frequency (MHz) |
Signal Type | VSWR | Pin (W) |
Test Voltage |
Result |
| 30(1) | CW | >65:1 at all Phase Angles | 0.11 (3 dB Overdrive) | 50 | No Device Degradation |
| 512(2) | CW | 0.95 (3 dB Overdrive) | |||
| 512(4) | Pulse (100 µsec, 20% Duty Cycle) | 0.14 Peak (3 dB Overdrive) | |||
| 512(4) | CW | 0.14 (3 dB Overdrive) |
2. Measured in 30-512 MHz broadband reference circuit.
3. The values shown are the minimum measured performance numbers across the indicated frequency range.
4. Measured in 512 MHz narrowband test circuit.