New transistors deliverhighest RF output power for radar and identification, friend-or-foe (IFF)systems
Chandler,AZ, April 11, 2016– NXP Semiconductors N.V. (NASDAQ: NXPI) today set a new benchmark in RF power performancewith four new LDMOS transistors. The new transistors aim to deliver best-in classperformance for defense radar and identification friend or foe (IFF) systemsoperating between 900 and 1400 MHz. Several defense contractors are currentlydeveloping and evaluating systems with these new high capability transistors.
The high RF output power from the four newtransistors help the U.S. Department of Defense (DoD) and its internationalpartners reach goals to reduce size, weight and power (SWaP) of its platformsby allowing amplifiers to use fewer devices to achieve a desired performance.This not only reduces amplifier size and board space but the bill of material(BOM).
"These RF power transistors are excellentexamples of NXP's commitment to meet stringent requirements of the defensemarket," said Pierre Piel senior director for RF power industrial technologiesat NXP. "These transistors allow designers of radar and IFF systems to delivergreater performance making them a perfect fit for next generation defenseplatforms."
New RF High Power LDMOS Transistors
MMRF1312H/HS – Typical applications are IFFMode S interrogators, L-band secondary surveillance radars, and distancemeasuring equipment (DME). This device operates from 900 to 1215 MHz at 52 Vwith a peak RF output power of at least 1200 W at P3dB, gain of 17.3 dB andefficiency of 54%.
MMRF1314H/HS – Typical application is L-bandprimary radar. This device operates from 1200 to 1400 MHz at 52 V with a peakRF output power of at least 1000 W, gain of 15.5 dB and efficiency of 46.5%.
MMRF1317H/HS – Typical applications are IFFMode S interrogators and secondary surveillance radars. This device operates from1030 to 1090 MHz at 50 V with a peak RF output power of at least 1500 W at P3dB(the highest power available at this frequency range using LDMOS technology),gain of 18.9 dB and efficiency of 56%.
MMRF2010N/GN – Typical applications are IFFMode S interrogators and secondary surveillance radars. This device operates from1030 to 1090 MHz at 50 V with a peak RF output power of 250 W, gain of 32.5 dBand efficiency of 59.1%.
The MMRF2010N/GN is housed in an over-moldedplastic package and the three other transistors are housed in ceramicair-cavity packages.
Exceptional Ruggedness
RF amplifiers used in defense systems are oftensubject to potentially damaging conditions such as high impedance mismatches(high VSWR) and input overdrive caused by co-site interference. However, the fournew transistors are designed to excel under these conditions. For example, theMMRF1312H/HS and MMRF1314H/HS will operate into a VSWR greater than 20:1 andthe MMRF1317H/HS and the MMRF2010N will operate into a VSWR greater than 10:1at 20 percent higher than rated supply voltage and twice their rated inputpower without damage.
Availability
NXP's high power RF transistors expand theLDMOS and GaN portfolio intended for defense applications. All of these devicesare part of the company's Product Longevity Program guaranteeing theiravailability for 15 years.
The MMRF1312H/HS, MMRF1314H/HS, MMRF1317H/HS andMMRF2010N RF power LDMOS transistors are in production. Reference designs andother enablement tools are available. For pricing or additional information,please contact your local NXP sales office or NXP approved distributor.
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About NXPSemiconductors
NXP Semiconductors N.V. (NASDAQ:NXPI) enables secure connections and infrastructure for a smarter world, advancingsolutions that make lives easier, better and safer. As the world leader insecure connectivity solutions for embedded applications, NXP is drivinginnovation in the secure connected vehicle, end-to-end security and privacy and smart connected solutions markets. Built on more than 60 years of combinedexperience and expertise, the company has 45,000 employees in more than 35countries and posted revenue of $6.1 billion in 2015. Find out more at www.nxp.com.
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Tel: +1 408-802-0602 | Tel: +31 6 10914896 | Tel: +886 2 8170 9990 |
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Email: tate.tran@nxp.com
| Email: martijn.van.der.linden@nxp.com | Email: esther.chang@nxp.com |
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